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<p>Achieving stable and anisotropic pattern transfer in high-aspect-ratio contact (HARC) SiO₂ etching requires careful control of sidewall passivation, mask preservation, and profile fidelity. In this study, cryogenic SiO₂ etching was examined using a C₂F₆/C₄F₈/He gas mixture in an inductively coupled plasma (ICP) system equipped with a 2&#xa0;MHz low-frequency bias. Plasma diagnostics indicated that C₂F₆ generates relatively carbon-rich CFₓ species compared with CF₄ under similar discharge conditions, which influences polymer formation and mask protection. Etching experiments at − 40&#xa0;°C showed that reduced surface diffusion promotes localized polymer retention and suppresses lateral redeposition, contributing to improved sidewall stability and reduced facet formation. The combined plasma, etching, and surface-analysis results provide insight into how gas chemistry, ion-energy control, and low-temperature operation jointly influence profile evolution in fluorocarbon-based ICP processing, offering a basis for further optimization of HARC SiO₂ etching in advanced patterning applications.</p> Graphical Abstract <p></p>

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Cryogenic Etching of SiO₂ in an ICP System Powered by 2 MHz Bias Using C₂F₆/C₄F₈/He Gas Mixtures: Enhanced Mask Preservation and Anisotropy for HARC Applications

  • 期刊论文

  • 发表日期：

    2026年4月27日

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  • Jiachen Wei,
  • Chen Yang,
  • Gilyoung Choi,
  • Kwang-Ho Kwon

摘要

Achieving stable and anisotropic pattern transfer in high-aspect-ratio contact (HARC) SiO₂ etching requires careful control of sidewall passivation, mask preservation, and profile fidelity. In this study, cryogenic SiO₂ etching was examined using a C₂F₆/C₄F₈/He gas mixture in an inductively coupled plasma (ICP) system equipped with a 2 MHz low-frequency bias. Plasma diagnostics indicated that C₂F₆ generates relatively carbon-rich CFₓ species compared with CF₄ under similar discharge conditions, which influences polymer formation and mask protection. Etching experiments at − 40 °C showed that reduced surface diffusion promotes localized polymer retention and suppresses lateral redeposition, contributing to improved sidewall stability and reduced facet formation. The combined plasma, etching, and surface-analysis results provide insight into how gas chemistry, ion-energy control, and low-temperature operation jointly influence profile evolution in fluorocarbon-based ICP processing, offering a basis for further optimization of HARC SiO₂ etching in advanced patterning applications.

Graphical Abstract