<p>In the present study, the rational design of combining organic semiconductor and inorganic silicon (Si) hybrid heterojunction was analysed for photovoltaic (PV) and photo-detection applications. A detailed comparison of PV performance of such heterojunction with three types of micro-structured Si surface evolved with respect to micro-texturing duration is carried out. The highest PV performance parameters (J<sub>sc</sub> = 30.76&#xa0;mA/cm<sup>2</sup>, V<sub>oc</sub> = 0.545&#xa0;V, FF = 71.9% and PCE = 12.08%) boosted by effective light trapping capabilities (reflectance &lt; 8.5% after polymer coating) is achieved for the 60&#xa0;min aq. KOH treated Si surface based hybrid solar cell (HSCs) in ‘Ag/PEDOT:PSS/n-Si/In:Ga’ design. The hybrid device also showed promising and stable photodetection properties with responsivity as high as 1426.6&#xa0;mA/W, noise equivalent power (NEP) of 2.71 × 10<sup>− 12</sup>&#xa0;W/<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\:\sqrt{Hz}\)</EquationSource> </InlineEquation>, detectivity of 5.15 × 10<sup>11</sup> Jones and rise time/fall time = 67 ms/67 ms for a 455&#xa0;nm light source. The optimized Si surface based hybrid heterojunction with excellent dual (PV and photodetection) properties demonstrated in this study may lead to cost-effective solution processed Si based hybrid opto-electronic devices.</p> Graphical abstract <p></p>

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Interplay between silicon surface engineering and optoelectronic properties for highly efficient PEDOT:PSS/Si hybrid heterojunction

  • Urvashi Punia,
  • Pukhraj Prajapat,
  • Riya Bansal,
  • Diksha,
  • Govind Gupta,
  • Prathap Pathi,
  • Sanjay K. Srivastava

摘要

In the present study, the rational design of combining organic semiconductor and inorganic silicon (Si) hybrid heterojunction was analysed for photovoltaic (PV) and photo-detection applications. A detailed comparison of PV performance of such heterojunction with three types of micro-structured Si surface evolved with respect to micro-texturing duration is carried out. The highest PV performance parameters (Jsc = 30.76 mA/cm2, Voc = 0.545 V, FF = 71.9% and PCE = 12.08%) boosted by effective light trapping capabilities (reflectance < 8.5% after polymer coating) is achieved for the 60 min aq. KOH treated Si surface based hybrid solar cell (HSCs) in ‘Ag/PEDOT:PSS/n-Si/In:Ga’ design. The hybrid device also showed promising and stable photodetection properties with responsivity as high as 1426.6 mA/W, noise equivalent power (NEP) of 2.71 × 10− 12 W/ \(\:\sqrt{Hz}\) , detectivity of 5.15 × 1011 Jones and rise time/fall time = 67 ms/67 ms for a 455 nm light source. The optimized Si surface based hybrid heterojunction with excellent dual (PV and photodetection) properties demonstrated in this study may lead to cost-effective solution processed Si based hybrid opto-electronic devices.

Graphical abstract