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<p>We report a systematic investigation of symmetrically (Bi, Sn) co-doped ZnO (ZBSO) thin films deposited on glass substrates via pneumatic spray pyrolysis (PSPN), focusing on the interplay between structural, optical, morphological, and electrical properties. X-ray diffraction analysis confirms that all films preserve the hexagonal wurtzite structure with dominant <i>c</i>-axis (002) orientation, and reveal a tunable crystallite size ranging from 24.7&#xa0;nm (1% co-doping) to 30.5&#xa0;nm (3% co-doping). A structural compensation effect arises from Bi-induced lattice expansion counterbalanced by Sn-induced contraction, yielding controlled compressive strain along the c-axis. Optical measurements show high visible transmittance (~ 82%) with a slight modulation of the band gap (3.25–3.29&#xa0;eV), consistent with the Burstein–Moss shift and enhanced carrier concentration. Photoluminescence spectra display strong UV near-band-edge emission (~ 382&#xa0;nm) with minimal green defect-related luminescence, indicating high crystalline quality. Morphological studies by SEM and AFM reveal columnar grains with RMS roughness between 4.5 and 13.2&#xa0;nm, correlating directly with crystallite size and microstructural order. Electrical characterization demonstrates a minimum resistivity of 2.26 × 10<sup>− 2</sup> Ω·cm at 1% co-doping, where substitutional Sn<sup>4+</sup> donors and oxygen vacancies synergistically enhance carrier density, while higher co-doping levels induce defect-mediated scattering and increase resistivity. These results establish that Bi–Sn co-doping offers a robust strategy to engineer ZnO thin films, simultaneously optimizing transparency, carrier transport, and surface morphology, thus making ZBSO films promising candidates for transparent conductive electrodes and optoelectronic applications.</p> Graphical abstract <p></p>

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Synergistic effects of symmetric Bi–Sn co-doping on the optical and electrical properties of ZnO thin films for transparent electrode applications

  • 期刊论文

  • 发表日期：

    2026年7月11日

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  • Fathi Chouikh,
  • Nesrine Haddad,
  • Faouzi Ghribi,
  • Yazid Bouznit,
  • Saoudi Ahmed,
  • Gerard Leroy,
  • Ştefan Ţălu

摘要

We report a systematic investigation of symmetrically (Bi, Sn) co-doped ZnO (ZBSO) thin films deposited on glass substrates via pneumatic spray pyrolysis (PSPN), focusing on the interplay between structural, optical, morphological, and electrical properties. X-ray diffraction analysis confirms that all films preserve the hexagonal wurtzite structure with dominant c-axis (002) orientation, and reveal a tunable crystallite size ranging from 24.7 nm (1% co-doping) to 30.5 nm (3% co-doping). A structural compensation effect arises from Bi-induced lattice expansion counterbalanced by Sn-induced contraction, yielding controlled compressive strain along the c-axis. Optical measurements show high visible transmittance (~ 82%) with a slight modulation of the band gap (3.25–3.29 eV), consistent with the Burstein–Moss shift and enhanced carrier concentration. Photoluminescence spectra display strong UV near-band-edge emission (~ 382 nm) with minimal green defect-related luminescence, indicating high crystalline quality. Morphological studies by SEM and AFM reveal columnar grains with RMS roughness between 4.5 and 13.2 nm, correlating directly with crystallite size and microstructural order. Electrical characterization demonstrates a minimum resistivity of 2.26 × 10− 2 Ω·cm at 1% co-doping, where substitutional Sn4+ donors and oxygen vacancies synergistically enhance carrier density, while higher co-doping levels induce defect-mediated scattering and increase resistivity. These results establish that Bi–Sn co-doping offers a robust strategy to engineer ZnO thin films, simultaneously optimizing transparency, carrier transport, and surface morphology, thus making ZBSO films promising candidates for transparent conductive electrodes and optoelectronic applications.

Graphical abstract