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<p>Ternary Cd<sub>1−x</sub>Mn<sub>x</sub>S (x = 0.4) thin films were fabricated using a cost-effective chemical bath deposition technique, and the influence of post-deposition annealing at 150&#xa0;°C, 200&#xa0;°C, 250&#xa0;°C, and 300&#xa0;°C on their structural, morphological, optical, and electrical characteristics was systematically examined. X-ray diffraction analysis confirmed the polycrystalline nature of the annealed films, revealing a cubic zinc blende phase with a pronounced enhancement in crystallinity at elevated annealing temperatures. Field-emission scanning electron microscopy demonstrated uniform, crack-free, and well-adherent films consisting of nearly spherical nanograins, with a progressive reduction in porosity upon annealing. Optical studies using UV–Vis spectroscopy revealed high transmittance in the visible region (70–80%), accompanied by an increase in absorbance and a gradual narrowing of the optical band gap from 2.83&#xa0;eV to 2.73&#xa0;eV with increasing annealing temperature. Electrical characterization under both dark and illuminated conditions revealed a marked decrease in resistance and resistivity, confirming the semiconducting and photoconductive nature of the films, while Hall-effect measurements established that the Cd<sub>1−x</sub>Mn<sub>x</sub>S thin films exhibit n-type conductivity. The observed enhancement in electrical conductivity with annealing temperature underscores the pivotal role of post-deposition annealing in tailoring the physicochemical properties of Cd<sub>1−x</sub>Mn<sub>x</sub>S thin films for advanced optoelectronic applications.</p>

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Effect of post-deposition annealing on the structural, morphological, optical, and electrical properties of Cd1−xMnxS thin films

  • 期刊论文

  • 发表日期：

    2026年6月3日

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  • Himanshu Sharma Pathok,
  • Alok Kumar Das,
  • Padma Pani Shahu,
  • Prasanta Kumar Saikia

摘要

Ternary Cd1−xMnxS (x = 0.4) thin films were fabricated using a cost-effective chemical bath deposition technique, and the influence of post-deposition annealing at 150 °C, 200 °C, 250 °C, and 300 °C on their structural, morphological, optical, and electrical characteristics was systematically examined. X-ray diffraction analysis confirmed the polycrystalline nature of the annealed films, revealing a cubic zinc blende phase with a pronounced enhancement in crystallinity at elevated annealing temperatures. Field-emission scanning electron microscopy demonstrated uniform, crack-free, and well-adherent films consisting of nearly spherical nanograins, with a progressive reduction in porosity upon annealing. Optical studies using UV–Vis spectroscopy revealed high transmittance in the visible region (70–80%), accompanied by an increase in absorbance and a gradual narrowing of the optical band gap from 2.83 eV to 2.73 eV with increasing annealing temperature. Electrical characterization under both dark and illuminated conditions revealed a marked decrease in resistance and resistivity, confirming the semiconducting and photoconductive nature of the films, while Hall-effect measurements established that the Cd1−xMnxS thin films exhibit n-type conductivity. The observed enhancement in electrical conductivity with annealing temperature underscores the pivotal role of post-deposition annealing in tailoring the physicochemical properties of Cd1−xMnxS thin films for advanced optoelectronic applications.