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<p>Ferroelectric materials have attracted significant interest for photovoltaic applications due to their open-circuit voltage is not limited to the band gap of the material. The present investigation focuses on the synthesis and investigation of BiFeO<sub>3</sub>’s optical and electrical properties. Indeed, the x ray diffraction shows that the BiFeO<sub>3</sub> crystallizes in the rhombohedral system, R3c space group symmetry (no.161) and the fallowing cell parameter a = b= 5.5845(2) Å and c = 13.8676(4) Å with a minor secondary phase of Bi<sub>2</sub>Fe<sub>4</sub>O<sub>9</sub>. The SEM study shows the particles size of 1.56&#xa0;μm and indicates the effect of two-stage planetary grinding during sample preparation. The optical study reveals gap energy of 2.2 ± 0.05&#xa0;eV, which is attributed to charge-transfer transitions between O 2p and Fe 3d orbitals and indicates wide-band gap semiconducting behavior. Electrical conductivity measurements further confirm this character and the Nyquists diagram shows the presence of grain and grain boundary effects. The calculated activation energy calculated from ω<sub>h</sub> and ω<sub>max</sub> indicates the simple hopping process governs the charge carrier’s mobility in the BiFeO<sub>3</sub>. Furthermore, the Joncher’s Law accurately represents the ac conductivity, and the CBH model succesfully describes well the conduction process within this sample. These findings support that BiFeO<sub>3</sub> is suitable for potential applications in environmentally friendly electronic, optoelectronic, and energy-related devices.</p>

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Electrical conduction mechanisms and impedance behavior of lead-free BiFeO3-based multiferroic materials

  • 期刊论文

  • 发表日期：

    2026年5月22日

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  • Ichrak Ben Slima,
  • Imed Zaied,
  • Dalal Alzahrani,
  • Raja Rabhi,
  • Nazar Elamin Ahmed,
  • Meshari Alotaibi,
  • Mousa M. Hossin,
  • Karim Karoui

摘要

Ferroelectric materials have attracted significant interest for photovoltaic applications due to their open-circuit voltage is not limited to the band gap of the material. The present investigation focuses on the synthesis and investigation of BiFeO3’s optical and electrical properties. Indeed, the x ray diffraction shows that the BiFeO3 crystallizes in the rhombohedral system, R3c space group symmetry (no.161) and the fallowing cell parameter a = b= 5.5845(2) Å and c = 13.8676(4) Å with a minor secondary phase of Bi2Fe4O9. The SEM study shows the particles size of 1.56 μm and indicates the effect of two-stage planetary grinding during sample preparation. The optical study reveals gap energy of 2.2 ± 0.05 eV, which is attributed to charge-transfer transitions between O 2p and Fe 3d orbitals and indicates wide-band gap semiconducting behavior. Electrical conductivity measurements further confirm this character and the Nyquists diagram shows the presence of grain and grain boundary effects. The calculated activation energy calculated from ωh and ωmax indicates the simple hopping process governs the charge carrier’s mobility in the BiFeO3. Furthermore, the Joncher’s Law accurately represents the ac conductivity, and the CBH model succesfully describes well the conduction process within this sample. These findings support that BiFeO3 is suitable for potential applications in environmentally friendly electronic, optoelectronic, and energy-related devices.