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<p>To improve the photoelectric detection performance of Silicon Photomultipliers (SiPM), this study optimizes the Photosensitive Region (PR) structure based on nanopillar/nanopore arrays. A theoretical model of electromagnetism and carrier transport for SiPM was established to derive the electromagnetic wave electric field distribution and analyze photogenerated carrier generation, transport and recombination, with the calculation method of quantum efficiency (QE) below breakdown clarified. The effects of key structural parameters of nanopillar/nanopore arrays (pore opening size, spacing, depth, pillar diameter, spacing, height) on the device’s optical and optoelectronic properties were explored via simulation, in comparison with a planar reference SiPM without an antireflection coating. Simulation results show that the N++-doped silicon nanopillar/nanopore array achieves significantly enhanced near-field electric field intensity via the synergistic effect of geometric light trapping and subwavelength structural resonance: the periodic micro-nano structure realizes broadband gradient refractive index matching to reduce surface reflection and extend the optical path through multiple scattering, and narrowband light confinement is further enhanced when structural parameters match the subwavelength resonance condition (pore opening <i>a</i> = 210&#xa0;nm, pillar spacing <i>d</i> = 210&#xa0;nm). This broadband-narrowband synergistic effect effectively improves light absorption efficiency and photogenerated carrier generation rate, leading to a significant increase in absorption rate of the array structure in 400–1100&#xa0;nm and an obvious improvement in simulated QE at specific wavelengths, although a decrease is observed in some short-wavelength ranges compared with the planar reference structure. In addition, the fabrication process of nanopillar/nanopore array SiPM is proposed, and the Deep Neural Network (DNN) is introduced for auxiliary performance analysis, providing a new idea for maximizing the device’s optoelectronic performance. This study provides important theoretical and technical support for the design and preparation of PR structures in high-performance SiPMs.</p>

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Structural optimization of photosensitive region in silicon photomultipliers based on nanopillar/nanopore arrays

  • 期刊论文

  • 发表日期：

    2026年5月22日

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  • Gou Fucheng,
  • Guo Chaoqian,
  • Xiangping Zhu,
  • Lina Liu,
  • Lianbi Li,
  • Caijuan Xia,
  • Xiaoxiang Han,
  • Guoqing Zhang

摘要

To improve the photoelectric detection performance of Silicon Photomultipliers (SiPM), this study optimizes the Photosensitive Region (PR) structure based on nanopillar/nanopore arrays. A theoretical model of electromagnetism and carrier transport for SiPM was established to derive the electromagnetic wave electric field distribution and analyze photogenerated carrier generation, transport and recombination, with the calculation method of quantum efficiency (QE) below breakdown clarified. The effects of key structural parameters of nanopillar/nanopore arrays (pore opening size, spacing, depth, pillar diameter, spacing, height) on the device’s optical and optoelectronic properties were explored via simulation, in comparison with a planar reference SiPM without an antireflection coating. Simulation results show that the N++-doped silicon nanopillar/nanopore array achieves significantly enhanced near-field electric field intensity via the synergistic effect of geometric light trapping and subwavelength structural resonance: the periodic micro-nano structure realizes broadband gradient refractive index matching to reduce surface reflection and extend the optical path through multiple scattering, and narrowband light confinement is further enhanced when structural parameters match the subwavelength resonance condition (pore opening a = 210 nm, pillar spacing d = 210 nm). This broadband-narrowband synergistic effect effectively improves light absorption efficiency and photogenerated carrier generation rate, leading to a significant increase in absorption rate of the array structure in 400–1100 nm and an obvious improvement in simulated QE at specific wavelengths, although a decrease is observed in some short-wavelength ranges compared with the planar reference structure. In addition, the fabrication process of nanopillar/nanopore array SiPM is proposed, and the Deep Neural Network (DNN) is introduced for auxiliary performance analysis, providing a new idea for maximizing the device’s optoelectronic performance. This study provides important theoretical and technical support for the design and preparation of PR structures in high-performance SiPMs.