Engineering high-performance lead-free Sr3SbCl3 perovskite based vertical photodetector with enhanced optoelectronic performance
摘要
In this work, a high-performance vertical photodetector using Sr3SbCl3 as the active perovskite absorber is comprehensively investigated numerically via SCAPS-1D software. The proposed photodetector is designed for broadband sensing (300–900 nm) and involves CuI as the hole transport layer and SnO2 as the electron transport layer, enhancing the charge extraction pathways. Herein, the absorber layer is subjected to a systematic optimization strategy that involves thickness tuning, total and interfacial defect densities. Here, operational conditions such as- temperature, series and shunt resistances are also varied. These engineering steps significantly improve carrier generation, suppress recombination and optimize the interfacial charge dynamics. As such, the optimized photodetector presents a photocurrent density of 27.126 mA/cm2 and immensely better optoelectronic performance with a peak responsivity of 0.588 A/W and an impressive detectivity of 8.4 × 1017 Jones at 760 nm. It further underscores the great potential of using environmentally friendly lead-free Sr3SbCl3 perovskites for high sensitivity photodetection. These insights from the optimization framework can act as guidelines for developing next-generation perovskite vertical photodetectors tailored for visible light applications in future advances in imaging, optical communication and low-light sensing technologies.