Optoelectronic properties and conduction mechanism of Bi2MoO6
摘要
The bismuth molybdate Bi2MoO6 compound crystallizes in the orthorhombic system with the Pca21 space group and lattice parameters a = 5.491 Å, b = 16.197 Å, and c = 5.504 Å. Its optical properties were investigated using UV–Vis spectroscopy in the 250–800 nm range. The Tauc method enabled the determination of the direct and indirect band gap energies, found to be 2.79 eV and 2.56 eV, respectively, confirming the semiconducting character of the material and its relevance for optoelectronic and energy-related applications. Additional optical parameters—including the Urbach energy (Eu), extinction coefficient (k), and refractive index (n)—were calculated, while the dispersion behavior of n was analyzed using the Wemple–DiDomenico single-oscillator model, from which the characteristic energies E0 and Ed were extracted. The optical conductivity was also examined as a function of photon energy. Electrical measurements performed by impedance spectroscopy in the 1 Hz–1 MHz frequency range and 453–573 K temperature interval showed that the AC conductivity follows Jonscher’s power law. The analysis indicates that charge transport proceeds via a correlated barrier hopping (CBH) mechanism, involving localized electron hopping between Mo5+/Mo6+ centers within the MoO6 octahedral network.