Extensive optoelectronic properties of fluorine doped ZnO nanostructures using modified chemical bath-hydrothermal method
摘要
This study systematically examines the effect of post-annealing treatment (PAT) on fluorine-doped ZnO (FZO) nanorods synthesized via a modified chemical bath–hydrothermal method. The novelty lies in establishing a clear correlation between annealing temperature and the simultaneous optimization of structural and optoelectronic properties of FZO nanorods. PAT significantly improved vertical alignment, crystallinity, and compositional uniformity, with 400 °C yielding the highest aspect ratio and minimum structural defects. A slight bandgap widening (3.213–3.235 eV) was observed with increasing annealing temperature, indicating enhanced optical quality. Optoelectronic parameters—including relaxation time (~ 10−13 s), optical mobility (~ 10−1 V m), resistivity (~ 10−20 Ω m), and plasma frequency (~ 1016 Hz)—showed strong temperature dependence, confirming improved charge transport characteristics. Overall, 400 °C is identified as the optimal annealing temperature, providing the best balance of crystallinity and optoelectronic performance. These findings demonstrate a practical route for tailoring FZO nanorods for advanced optoelectronic device applications.