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<p>Cd<sub>x</sub>Zn<sub>(1−x)</sub>Se thin films were grown by the Successive Ionic Layer Adsorption and Reaction (SILAR) method on a glass substrate at room temperature. X-ray diffraction (XRD), thickness measurement, and room temperature and variable temperature absorption measurements were performed on each sample. XRD measurements have been shown that the thin films are polycrystalline and for CdSe c-axis is dominant while (111) direction is dominant for ZnSe film. SEM images show homogeneous surface coverage and a change in grain structure as the Zn content increases. The change in particle size was calculated using the Image J program. Absorption measurement showed that all the films are of acceptable optical quality. Bandgap of the CdSe and ZnSe thin films were determined as 1.88 and 2.68&#xa0;eV, respectively. The bowing parameter of the ternary Cd<sub>x</sub>Zn<sub>(1−x)</sub>Se thin films have been determined as 1.34.</p>

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Fabrication of ternary CdxZn1−xSe thin films: optical and structural characterization

  • 期刊论文

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  • 发表日期：

    2026年3月13日

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  • Tuba Çayir Taşdemirci

摘要

CdxZn(1−x)Se thin films were grown by the Successive Ionic Layer Adsorption and Reaction (SILAR) method on a glass substrate at room temperature. X-ray diffraction (XRD), thickness measurement, and room temperature and variable temperature absorption measurements were performed on each sample. XRD measurements have been shown that the thin films are polycrystalline and for CdSe c-axis is dominant while (111) direction is dominant for ZnSe film. SEM images show homogeneous surface coverage and a change in grain structure as the Zn content increases. The change in particle size was calculated using the Image J program. Absorption measurement showed that all the films are of acceptable optical quality. Bandgap of the CdSe and ZnSe thin films were determined as 1.88 and 2.68 eV, respectively. The bowing parameter of the ternary CdxZn(1−x)Se thin films have been determined as 1.34.