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<p>We present modeling and simulation of optimal performance parameters for inverted organic solar cells (OSC) to enhance their efficiency. Several different simulation models, including the drift diffusion model (DDM), the exciton diffusion and transfer matrix model (TMM), were employed. First, the thickness of the photoactive layer (PAL) was optimized. The TMM shows that the maximum absorption in the visible portion within the PAL. The absorption distribution pattern provides valuable insights into photon absorption behavior and photon escape probability distribution. Moreover, the effects of surface temperature (ST), sunlight intensity, and the electron and hole transport layers were optimized. In addition, the carrier concentration and the mobilities of electrons (µ<sub>e</sub>) and holes (µ<sub>h</sub>) change as the temperature increases from 300&#xa0;to 400&#xa0;K, which affects the efficiency of the devices. The results also show that both the short-circuit current density (Jsc) and the open-circuit voltage (Voc) increase with illumination intensity, ranging from 0.01 to 1.5 suns. Additionally, by adding ZnO as the electron transport layer (ETL) and WO<sub>3</sub> as the hole-extracting layer (HEL), the optimized device showed an increased efficiency of 5.8%. Moreover, the best performance was observed when the hole-to-electron ratio was equal to 1, confirming efficient transport and minimum recombination losses. These results highlight that using optimum device parameters is an effective approach for fabricating inverted OSCs suitable for industrial photovoltaic applications.</p>

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Simulation-driven optimization of P3HT:PCBM-based inverted organic solar cells: a drift diffusion study

  • 期刊论文

  • 发表日期：

    2026年1月27日

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  • Javid Ullah,
  • Ibrar Ahmad,
  • Zia Ur Rehman,
  • Kashif Ul Haq,
  • Muhammad Hasham,
  • Mujahid Islam,
  • Khizar Hayat,
  • Said Karim Shah

摘要

We present modeling and simulation of optimal performance parameters for inverted organic solar cells (OSC) to enhance their efficiency. Several different simulation models, including the drift diffusion model (DDM), the exciton diffusion and transfer matrix model (TMM), were employed. First, the thickness of the photoactive layer (PAL) was optimized. The TMM shows that the maximum absorption in the visible portion within the PAL. The absorption distribution pattern provides valuable insights into photon absorption behavior and photon escape probability distribution. Moreover, the effects of surface temperature (ST), sunlight intensity, and the electron and hole transport layers were optimized. In addition, the carrier concentration and the mobilities of electrons (µe) and holes (µh) change as the temperature increases from 300 to 400 K, which affects the efficiency of the devices. The results also show that both the short-circuit current density (Jsc) and the open-circuit voltage (Voc) increase with illumination intensity, ranging from 0.01 to 1.5 suns. Additionally, by adding ZnO as the electron transport layer (ETL) and WO3 as the hole-extracting layer (HEL), the optimized device showed an increased efficiency of 5.8%. Moreover, the best performance was observed when the hole-to-electron ratio was equal to 1, confirming efficient transport and minimum recombination losses. These results highlight that using optimum device parameters is an effective approach for fabricating inverted OSCs suitable for industrial photovoltaic applications.