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<p>This paper examines the impact of excess carrier injection on the linear refractive index and linear absorption of n-type and p-type silicon within the wavelength range of 1 to 8&#xa0;μm. By implementing empirical models and utilizing existing data, we have determined the contributions of excess carriers to linear absorption and linear refractive index, and we have analyzed how these parameters change at different carrier concentrations across the wavelength range. The results calculated using the proposed functions align well with available experimental data. Our findings illustrate that both the refractive index and linear absorption significantly change, particularly at longer wavelengths, due to increasing carrier concentrations. Notably, the absorption coefficient for n-type silicon increases more significantly compared to that of p-type silicon as the carrier concentration rises. Conversely, the changes in the refractive index behave oppositely for n-type and p-type silicon. Using the developed method, one can optimize the design and performance of electro-optical devices, particularly in the near- and mid-infrared regions.</p>

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Role of free-carriers injection on linear refractive index and absorption of silicon over wavelength range of 1–8 μm

  • 期刊论文

  • 发表日期：

    2025年12月19日

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  • E. Namjoo,
  • A. Safaei Bezgabadi,
  • M. Monajati

摘要

This paper examines the impact of excess carrier injection on the linear refractive index and linear absorption of n-type and p-type silicon within the wavelength range of 1 to 8 μm. By implementing empirical models and utilizing existing data, we have determined the contributions of excess carriers to linear absorption and linear refractive index, and we have analyzed how these parameters change at different carrier concentrations across the wavelength range. The results calculated using the proposed functions align well with available experimental data. Our findings illustrate that both the refractive index and linear absorption significantly change, particularly at longer wavelengths, due to increasing carrier concentrations. Notably, the absorption coefficient for n-type silicon increases more significantly compared to that of p-type silicon as the carrier concentration rises. Conversely, the changes in the refractive index behave oppositely for n-type and p-type silicon. Using the developed method, one can optimize the design and performance of electro-optical devices, particularly in the near- and mid-infrared regions.