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<p>We present a photonic-crystal-based rib waveguide design for atom-chip applications that enables robust trapping of ultracold atoms. Using the generalized Effective Index Method (gEIM) together with concepts from “scale-invariant” non-Gaussian photonics, we design a geometry that supports a flat-top attractive mode and an edge-enhanced repulsive mode. The structure, fabricated on a 1D photonic crystal substrate, sustains surface modes at 850&#xa0;nm (red-detuned, attractive) and 640&#xa0;nm (blue-detuned, repulsive) with effective refractive indices near unity, yielding extended evanescent penetration into vacuum. This configuration enhances lateral confinement, mitigates atomic losses near the waveguide edges, and removes the need for an auxiliary transverse-control laser. Full-vectorial simulations confirm a stable trap for ultracold rubidium atoms with a depth of 170&#xa0;µK at a distance of over 865&#xa0;nm from the surface, minimizing surface-induced effects and providing a compact platform for quantum sensing applications.</p>

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Non-gaussian photonic crystal surface modes for robust trapping of ultracold atoms

  • 期刊论文

  • 发表日期：

    2025年12月12日

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  • Valery Konopsky

摘要

We present a photonic-crystal-based rib waveguide design for atom-chip applications that enables robust trapping of ultracold atoms. Using the generalized Effective Index Method (gEIM) together with concepts from “scale-invariant” non-Gaussian photonics, we design a geometry that supports a flat-top attractive mode and an edge-enhanced repulsive mode. The structure, fabricated on a 1D photonic crystal substrate, sustains surface modes at 850 nm (red-detuned, attractive) and 640 nm (blue-detuned, repulsive) with effective refractive indices near unity, yielding extended evanescent penetration into vacuum. This configuration enhances lateral confinement, mitigates atomic losses near the waveguide edges, and removes the need for an auxiliary transverse-control laser. Full-vectorial simulations confirm a stable trap for ultracold rubidium atoms with a depth of 170 µK at a distance of over 865 nm from the surface, minimizing surface-induced effects and providing a compact platform for quantum sensing applications.