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<p>Ga<sub>0.997</sub>B<sub>0.003</sub>Se single crystals were synthesized by the horizontal Bridgman method and investigated for ultrafast optoelectronic applications. X-ray diffraction confirmed the formation of a single-phase ε-GaSe structure (space group <i>P</i>6₃/<i>mmc</i>) without secondary phases. The diffraction peaks shifted slightly toward higher 2θ values due to lattice compression caused by the substitution of smaller boron atoms for gallium, while the average crystalline size (~ 84.6&#xa0;nm) indicated high structural quality. The crystal exhibited p-type conductivity with a resistivity of 9.1 × 10<sup>6</sup> Ω&#xa0;cm at 300&#xa0;K and an activation energy of 1.77&#xa0;eV, confirming the presence of boron-induced shallow acceptor levels about 0.25&#xa0;eV above the valence band. Photocurrent spectra showed a main peak at 2.02&#xa0;eV at 205&#xa0;K and a redshifted maximum at 1.77&#xa0;eV at 295&#xa0;K, evidencing temperature-activated acceptor transitions. Time-resolved photocurrent measurements revealed an ultrafast carrier relaxation time of ~ 4 ns. Optical analysis showed a direct allowed transition with a band gap of 1.963&#xa0;eV, slightly lower than that of undoped GaSe (2.02&#xa0;eV). The results demonstrate that boron incorporation enhances carrier transport and response speed, making Ga<sub>0.997</sub>B<sub>0.003</sub>Se a promising material for high-frequency photodetectors and optical wireless communication systems.</p>

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Synthesis and characterization of Ga0.997B0.003Se crystal for ultrafast optoelectronic applications

  • 期刊论文

  • 发表日期：

    2025年12月5日

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  • Lamiya Balayeva,
  • Ali Guseinov,
  • Fidan Akhmedova

摘要

Ga0.997B0.003Se single crystals were synthesized by the horizontal Bridgman method and investigated for ultrafast optoelectronic applications. X-ray diffraction confirmed the formation of a single-phase ε-GaSe structure (space group P6₃/mmc) without secondary phases. The diffraction peaks shifted slightly toward higher 2θ values due to lattice compression caused by the substitution of smaller boron atoms for gallium, while the average crystalline size (~ 84.6 nm) indicated high structural quality. The crystal exhibited p-type conductivity with a resistivity of 9.1 × 106 Ω cm at 300 K and an activation energy of 1.77 eV, confirming the presence of boron-induced shallow acceptor levels about 0.25 eV above the valence band. Photocurrent spectra showed a main peak at 2.02 eV at 205 K and a redshifted maximum at 1.77 eV at 295 K, evidencing temperature-activated acceptor transitions. Time-resolved photocurrent measurements revealed an ultrafast carrier relaxation time of ~ 4 ns. Optical analysis showed a direct allowed transition with a band gap of 1.963 eV, slightly lower than that of undoped GaSe (2.02 eV). The results demonstrate that boron incorporation enhances carrier transport and response speed, making Ga0.997B0.003Se a promising material for high-frequency photodetectors and optical wireless communication systems.