<p>Molybdenum disulfide (MoS₂) thin films have emerged as highly promising materials for next-generation electronic and optoelectronic applications owing to their exceptional electronic tunability, strong light-matter interactions, and compatibility with large-area fabrication. While pristine MoS₂ typically exhibits intrinsic n-type conductivity, nitrogen doping provides an effective means to tailor its electronic structure and induce stable p-type behavior. In this work, nitrogen-doped MoS₂ thin films were successfully fabricated using a simple, cost-effective, and scalable spray-coating approach, enabling uniform doping over large areas under mild processing conditions. Comprehensive structural characterization confirms the polycrystalline nature of the films and the coexistence of mixed-phase 1T (metallic) and 2H (semiconducting) MoS₂, whose relative proportions evolve systematically with nitrogen incorporation. X-ray photoelectron spectroscopy evidences efficient nitrogen incorporation, up to 4.83 at%, via substitutional and interstitial mechanisms, resulting in local lattice distortion and partial 1T-phase stabilization. Electrical characterization of back-gated field-effect transistors based on the as-deposited films reveals a clear transition to p-type conduction, with a maximum hole mobility of 3.1 cm²·V⁻¹·s⁻¹. The results demonstrate that nitrogen incorporation effectively modulates the band structure and carrier type in MoS₂ while maintaining film integrity. This study establishes nitrogen doping via spray coating as a practical and scalable route to engineer the conduction type and electronic properties of MoS₂, paving the way for its integration into low-cost, flexible, and large-area 2D electronic and optoelectronic devices.</p>