A computational investigation of ZnOS buffer layer integration for improved performance of perovskite solar cell
摘要
In this work, the SCAPS-1D modeling program was used to study the impact of an inorganic buffer layer (BL) of ZnOS on the performance of perovskite solar cells (PSCs). The proposed solar cell structure consisted of a glass/TCO/TiO2/ZnOS/CsPbI3/CuSbS2/Au configuration. Incorporating ZnOS-BL between the electron transport layer (ETL) and absorber layer (AL) improved the charge transportation, enhancing the overall performance. The effects of material characteristics, such as the thickness of AL as well as the electron affinity of ETL, BL, and hole transport layer (HTL), were studied. Moreover, the doping densities of ETL, BL and HTL were also examined and optimized to achieve the highest device performance. Consequently, the device performance parameters improved significantly, such as the device incorporating BL achieved JSC of 22.98 mA/cm2, VOC of 1.13 V, FF of 86.25% and power conversion efficiency (PCE) of 22.04% compared to the reference device without BL with JSC of 18.46 mA/cm2, VOC of 0.79 V, FF of 78.81%, and PCE of 11.14%. The proposed modeling process opens a new path for researchers to develop this BL-based PSC experimentally.