<p>Single-junction perovskite solar cells, part of the emerging third-generation photovoltaic technologies, face intrinsic limitations such as poor charge separation, instability, and elevated recombination losses. To overcome these challenges and address the environmental concerns associated with lead-based perovskites, a novel, lead-free next-generation, tin-based dual absorber perovskite solar cell (TDAPSC) featuring the device architecture Au/FTO/<InlineEquation ID="IEq5"> <EquationSource Format="TEX">\(\textrm{SnS}_{2}\)</EquationSource> </InlineEquation>/<InlineEquation ID="IEq6"> <EquationSource Format="TEX">\(\textrm{BaSnS}_{3}\)</EquationSource> </InlineEquation>/<InlineEquation ID="IEq7"> <EquationSource Format="TEX">\(\textrm{Rb}_{2}\textrm{SnI}_{6}\)</EquationSource> </InlineEquation>/PEDOT/Ni is proposed here. Through the integration of two complementary tin-based absorbers, <InlineEquation ID="IEq8"> <EquationSource Format="TEX">\(\textrm{Rb}_{2}\textrm{SnI}_{6}\)</EquationSource> </InlineEquation> (a halide perovskite variant) and <InlineEquation ID="IEq9"> <EquationSource Format="TEX">\(\textrm{BaSnS}_{3}\)</EquationSource> </InlineEquation> (a sulfide perovskite) this architecture eliminates lead-related toxicity while leveraging broad spectral absorption, superior carrier mobility, and high quantum efficiency. Detailed SCAPS-1D simulations to optimize key performance parameters including recombination pathways, absorber thicknesses, defect densities, charge carrier distributions, and energy level alignment across interfaces are conducted. As a result, the optimized TDAPSC achieved an open-circuit voltage (<InlineEquation ID="IEq10"> <EquationSource Format="TEX">\(V_{\textrm{oc}}\)</EquationSource> </InlineEquation>) of 1.20&#xa0;V, a short-circuit current density (<InlineEquation ID="IEq11"> <EquationSource Format="TEX">\(J_{\textrm{sc}}\)</EquationSource> </InlineEquation>) of 35.83 mA/cm<sup>2</sup>, and a fill factor (FF) of 89.33%, leading to a remarkable power conversion efficiency (PCE) of 38.44%. This enhanced performance stems from suppressed recombination and efficient charge extraction facilitated by energy-level alignment between <InlineEquation ID="IEq13"> <EquationSource Format="TEX">\(\textrm{BaSnS}_{3}\)</EquationSource> </InlineEquation> and <InlineEquation ID="IEq14"> <EquationSource Format="TEX">\(\textrm{Rb}_{2}\textrm{SnI}_{6}\)</EquationSource> </InlineEquation>. Moreover, the fully inorganic composition ensures excellent chemical and thermal stability, while also offering scalable fabrication potential. Altogether, this TDAPSC design presents a highly promising pathway toward next-generation photovoltaic technologies that prioritize environmental safety, performance, and long-term durability.</p>

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Modeling and optimization of advanced-performance tin-based dual absorber perovskite solar cell (Rb2SnI6/BaSnS3) using SCAPS-1D

  • Venkateswarlu .G,
  • C. V. M. Chaturvedi,
  • Umakanta Nanda,
  • J. Bhaskara Rao,
  • E. Sampad,
  • Nalini Bodasingi

摘要

Single-junction perovskite solar cells, part of the emerging third-generation photovoltaic technologies, face intrinsic limitations such as poor charge separation, instability, and elevated recombination losses. To overcome these challenges and address the environmental concerns associated with lead-based perovskites, a novel, lead-free next-generation, tin-based dual absorber perovskite solar cell (TDAPSC) featuring the device architecture Au/FTO/ \(\textrm{SnS}_{2}\) / \(\textrm{BaSnS}_{3}\) / \(\textrm{Rb}_{2}\textrm{SnI}_{6}\) /PEDOT/Ni is proposed here. Through the integration of two complementary tin-based absorbers, \(\textrm{Rb}_{2}\textrm{SnI}_{6}\) (a halide perovskite variant) and \(\textrm{BaSnS}_{3}\) (a sulfide perovskite) this architecture eliminates lead-related toxicity while leveraging broad spectral absorption, superior carrier mobility, and high quantum efficiency. Detailed SCAPS-1D simulations to optimize key performance parameters including recombination pathways, absorber thicknesses, defect densities, charge carrier distributions, and energy level alignment across interfaces are conducted. As a result, the optimized TDAPSC achieved an open-circuit voltage ( \(V_{\textrm{oc}}\) ) of 1.20 V, a short-circuit current density ( \(J_{\textrm{sc}}\) ) of 35.83 mA/cm2, and a fill factor (FF) of 89.33%, leading to a remarkable power conversion efficiency (PCE) of 38.44%. This enhanced performance stems from suppressed recombination and efficient charge extraction facilitated by energy-level alignment between \(\textrm{BaSnS}_{3}\) and \(\textrm{Rb}_{2}\textrm{SnI}_{6}\) . Moreover, the fully inorganic composition ensures excellent chemical and thermal stability, while also offering scalable fabrication potential. Altogether, this TDAPSC design presents a highly promising pathway toward next-generation photovoltaic technologies that prioritize environmental safety, performance, and long-term durability.