An extensive study on multiple ETL layers to design and simulation of high-performance Ag2MgSnSe4-based chalcogenide solar cells for photovoltaic applications
摘要
This paper presents the results of a numerical simulation analysis conducted using the SCAPS-1D modelling tool on Ag2MgSnSe4 solar cells, a novel quaternary chalcogenide material. The effects of the absorber layer’s thickness, doping density, defect density, and mobility on device performance have been thoroughly investigated and modified in this work. Here, aluminium and nickel make up the front and back contacts, respectively, and tin disulphide, tungsten disulphide, zinc oxide, and PCBM make up the electron transport layers. Cu2O is the HTL. Quantum efficiency (QE), generation-recombination rates, current-voltage density (J-V), capacitance, temperature, series and shunt resistances, and Mott-Schottky characteristics are the many other parameters studied. Cu2O was shown to be the most effective HTL for Ag2MgSnSe4 out of the four ETLs used in this investigation. So, for SnS2, WS2, ZnO, and PCBM, the resulting power conversion efficiencies (PCEs) were 26.36%, 25.86%, 25.84%, and 25.80%, respectively. Solar cell designs based on quaternary chalcogenides may be optimized using the suggested technique.