On-chip waveguides on sapphire substrate for tunable zero dispersion wavelengths at 1.55 μm and 2 μm
摘要
Generation of near-IR to mid-IR light spectrum is essential for advancing techniques like environment monitoring, mid-IR spectroscopy, sensing, guided missile technology, quantum communication, etc. Nonlinear optical phenomena are key for developing mid-IR light sources. In this paper, numerical analysis of dispersion-tailored tellurium oxide (TeO2) on-chip waveguide devices on sapphire substrate have been presented to tune zero dispersion wavelengths (ZDWs) at 1.55 μm and 2 μm. Two different waveguide designs are reported: a TeO2 rib waveguide design that attains ZDW at 1.55 μm, and a TeO2-coated SiN hybrid waveguide design that achieves ZDW at 2.05 μm for maximum power transfer through the waveguide devices. The numerical simulations illustrate the suitability of the waveguide device on a sapphire substrate for generating mid-IR spectrum using conventional laser sources operating at 1.55 μm and 2 μm. Additionally, at 1.55 μm TeO2 rib waveguide design exhibited 0.15 × 10−2 dB/cm confinement loss and 1430 (W.Km)−1 nonlinearity values. While TeO2-coated SiN hybrid waveguide design shows confinement loss of 0.15 × 10−3 dB/cm, and nonlinearity of 829 (W.Km)−1 at 2 μm wavelength. Designs of both waveguides show dispersion characteristics in anomalous regions and can be significantly used to generate nonlinear applications using commercially available sources and extend their functionality in integrated photonics.