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<p>We have numerically demonstrated far ultraviolet-c AlGaN laser diodes (LDs) with a peak output wavelength of 221&#xa0;nm. In this paper, to reduce electron leakage and enhanced optical power, trapezoidal p-cladding layer is presented to reduce energy loss of holes during injection towards active region. It is found that the trapezoidal upper p-cladding effectively enhances the spectral gain and slope efficiency with respect to the conventional uniform composition structure. The trapezoidal upper p-cladding has notably enhanced laser power and a threshold current of 69.1&#xa0;mA is achieved. Moreover, the graded cladding layer limits the leakage of carriers from the multiquantum well that imparts a crucial role for enhancing the stimulated recombination rate leading to an enhanced optoelectronic properties of the 221&#xa0;nm far ultraviolet-c LD.</p>

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Far ultraviolet-C AlGaN laser diode (221 nm) with trapezoidal graded upper p-cladding layer for enhanced performance

  • 期刊论文

  • 发表日期：

    2025年10月25日

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  • Syeda Wageeha Shakir,
  • Muhammad Usman,
  • Usman Habib,
  • Shazma Ali

摘要

We have numerically demonstrated far ultraviolet-c AlGaN laser diodes (LDs) with a peak output wavelength of 221 nm. In this paper, to reduce electron leakage and enhanced optical power, trapezoidal p-cladding layer is presented to reduce energy loss of holes during injection towards active region. It is found that the trapezoidal upper p-cladding effectively enhances the spectral gain and slope efficiency with respect to the conventional uniform composition structure. The trapezoidal upper p-cladding has notably enhanced laser power and a threshold current of 69.1 mA is achieved. Moreover, the graded cladding layer limits the leakage of carriers from the multiquantum well that imparts a crucial role for enhancing the stimulated recombination rate leading to an enhanced optoelectronic properties of the 221 nm far ultraviolet-c LD.