In this study, a numerical model was used to calculate the Shockley-Read-Hall (SRH) current density in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of \({\text{InGaN/GaN}}\) MQWLED and the hole eigenstates are calculated via a \(6 \times 6\) k.p method under applied hydrostatic pressure. Our calculations demonstrated that the Huang-Rhys factor (HRF) of light holes and the split of band holes had the highest contributions to hole capture coefficients (60% and 30%, respectively). A change in pressure up to 10 GPa decreased the radius of point defects, the HRF and the longitudinal optical (LO) phonon scattering integral. Based on the results, this could reduce the capture coefficients of electrons, holes, and equal in the quantum well, and lower the SRH coefficient and current in MQW regions. Overall, it was revealed that the performance of LEDs is better when the SRH current is lower, indicating that hydrostatic pressure plays a positive role in the performance of these diodes.
