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<p>In this study, we report high-operating-temperature mid-wave infrared detectors based on InAs/InAsSb superlattice (SL) nBn structures. The InAs/InAsSb SL, grown by molecular beam epitaxy (MBE) on GaSb substrates, exhibit excellent crystallinity (HRXRD FWHM: 20.24 arcsec) and atomic-level surface smoothness (RMS roughness: 1.2&#xa0;Å). A 640 × 512/15&#xa0;μm pitch mid-wave infrared focal plane array (FPA) was fabricated using mesa isolation, SiO₂ passivation, and flip-chip bonding to a silicon read out integrated circuit (ROIC). Under 150&#xa0;K operation and − 0.3&#xa0;V bias, dark current density is 5.41 × 10<sup>–6</sup>&#xa0;A/cm<sup>2</sup>. The spectral response shows 50% quantum efficiency at 4.5&#xa0;μm (uncoated) and a cutoff wavelength of 4.82&#xa0;μm at 50% responsivity. At 150&#xa0;K under f/2 optics, the FPA achieves a noise equivalent temperature difference (NETD) of 18.39 mK, peak detectivity of 7 × 10<sup>11</sup>&#xa0;cm*Hz<sup>1/2</sup>/W, 99.7% pixel operability. These results demonstrate that InAs/InAsSb SL mid-wave infrared focal plane arrays enable medium-cryogenic operation (150&#xa0;K).</p>

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High operating temperature mid-wavelength InAs/InAsSb superlattice barrier detector and focal plane array

  • 期刊论文

  • 发表日期：

    2025年10月25日

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  • Junbin Li,
  • Peifeng Zhang,
  • Longhua Chen,
  • Zhe Zhang,
  • Li Zhang,
  • Wei Wang,
  • Haifeng Yang,
  • Chuang Wang,
  • Jin Wen,
  • Jiankai Xue,
  • Xurui Peng,
  • Haiyan Shi,
  • Zichen Zhang

摘要

In this study, we report high-operating-temperature mid-wave infrared detectors based on InAs/InAsSb superlattice (SL) nBn structures. The InAs/InAsSb SL, grown by molecular beam epitaxy (MBE) on GaSb substrates, exhibit excellent crystallinity (HRXRD FWHM: 20.24 arcsec) and atomic-level surface smoothness (RMS roughness: 1.2 Å). A 640 × 512/15 μm pitch mid-wave infrared focal plane array (FPA) was fabricated using mesa isolation, SiO₂ passivation, and flip-chip bonding to a silicon read out integrated circuit (ROIC). Under 150 K operation and − 0.3 V bias, dark current density is 5.41 × 10–6 A/cm2. The spectral response shows 50% quantum efficiency at 4.5 μm (uncoated) and a cutoff wavelength of 4.82 μm at 50% responsivity. At 150 K under f/2 optics, the FPA achieves a noise equivalent temperature difference (NETD) of 18.39 mK, peak detectivity of 7 × 1011 cm*Hz1/2/W, 99.7% pixel operability. These results demonstrate that InAs/InAsSb SL mid-wave infrared focal plane arrays enable medium-cryogenic operation (150 K).