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<p>This study presents a numerical analysis of the optical characteristics of an AlGaInP-based red laser diodes with a peak emission wavelength of 637&#xa0;nm. Two AlGaInP-based red laser diodes i.e., one without and one with three pairs of AlGaP/GaP superlattices into the active region are comparatively studied. Results show a marked improvement in the output power, stimulated recombination rate, and optical gain. The optimized structure significantly enhances hole injection, leading to a substantial increase in optical gain and a reduction in the lasing threshold from 670&#xa0;A/cm<sup>2</sup> to 545&#xa0;A/cm<sup>2</sup>. Additionally, the slope efficiency of the AlGaP/GaP superlattices design is increased from 0.2&#xa0;W/A to 0.4&#xa0;W/A. The incorporation of AlGaP/GaP superlattices has been shown to significantly enhance the overall performance of AlGaInP‑based red laser diodes compared with the device without superlattices.</p>

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Leveraging algap/gap superlattices to elevate AlGaInP red laser diode performance

  • 期刊论文

  • 发表日期：

    2025年9月13日

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  • Anum,
  • Muhammad Usman,
  • Usman Habib,
  • Shazma Ali

摘要

This study presents a numerical analysis of the optical characteristics of an AlGaInP-based red laser diodes with a peak emission wavelength of 637 nm. Two AlGaInP-based red laser diodes i.e., one without and one with three pairs of AlGaP/GaP superlattices into the active region are comparatively studied. Results show a marked improvement in the output power, stimulated recombination rate, and optical gain. The optimized structure significantly enhances hole injection, leading to a substantial increase in optical gain and a reduction in the lasing threshold from 670 A/cm2 to 545 A/cm2. Additionally, the slope efficiency of the AlGaP/GaP superlattices design is increased from 0.2 W/A to 0.4 W/A. The incorporation of AlGaP/GaP superlattices has been shown to significantly enhance the overall performance of AlGaInP‑based red laser diodes compared with the device without superlattices.