Numerical study of KSnI3-based perovskite solar cell through a comparison of hole transport layers by SCAPS-1D
摘要
The incorporation of toxic lead obstructs the development and commercialization of perovskite solar cells. A numerical simulation is carried out in the current work to investigate non-toxic KSnI3-based photovoltaic device with STO (Selenium tin oxide) as electron transport layer. A comparison was made between two-hole transport layers (Cu2O and NiO) to determine the highest power conversion efficiency (PCE). At the initial stage the power conversion efficiency for NiO and Cu2O are 15.59%, and 16.52%, respectively. The solar cell capacitance simulator in one dimensional (SCAPS-1D) has been used to design FTO/STO/KSnI3/HTLs/Ag structure. The best results are obtained using Cu2O as HTL, with a 650 nm thickness of absorber, a shallow donor concentration of 1017 cm⁻3, absorber defect density 1012 cm−3, ETL thickness 10 nm, operating temperature of 340 K, and Ni as a back contact. Therefore, the FTO/STO/KSnI3/Cu2O/Ni configuration in the study represents the highest-performance of perovskite solar cell design. The optimized device exhibited PCE = 23.91%, FF = 86.59%, Jsc = 16.945 mA/cm2, and Voc = 1.629 V. The behavior of generation and recombination in the system have been investigated. Additionally, current density–voltage (J–V) characteristics, quantum efficiency (Q-E), and capacitance–voltage (C–V) measurements have been analyzed to investigate the device's electrical properties. This study offers an effective and dependable approach for achieving significant efficiency in perovskite solar cells.