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<p>In this study, thin films of pure and chlorine-doped indium sulfide (In<sub>2</sub>S<sub>3</sub>) were developed using the spray pyrolysis technique. The doping concentration varied from 0 to 5% with a deposition temperature maintained at 350&#xa0;°C. The structural properties were determined using the XRD technique. The thin layers have a cubic structure of In<sub>2</sub>S<sub>3</sub> without any evidence of secondary phases. In addition, the crystallinity is improved with the increase of doping concentration, while the crystallite size is in the range of 18 to 44&#xa0;nm. On the other hand, XPS analysis of chemical elements reveals that the In3d peaks with connection energies of 444&#xa0;eV (In 3d<sub>5/2</sub>) and 451.5&#xa0;eV (In 3d<sub>3/2</sub>) as well as an S2p peak with a binding energy of 161.7&#xa0;eV (2p<sub>3/2</sub>) corresponding to the In<sub>2</sub>S<sub>3</sub> phase. The Cl/S ratio confirmed the increase in the concentration of chlorine ions (Cl<sup>−</sup>) in the In<sub>2</sub>S<sub>3</sub> matrix. Furthermore, the study of complex impedance indicates a non-Debye relaxation behavior. The photocurrent study of pure and chlorine doped In<sub>2</sub>S<sub>3</sub> demonstrates a significant enhancement in sensitivity, photo-reactivity, detection, and response speed with the addition of chlorine. We note here that the In<sub>2</sub>S<sub>3</sub>:Cl<sub>4%</sub> sample exhibits the optimal values across all these parameters. This increase in photosensitivity highlights the importance of more investigating the doping effect on the physicochemical properties of these films.</p>

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Structural, electrical and photoconductive properties of sprayed In2S3:Cl thin films

  • 期刊论文

  • 发表日期：

    2025年8月5日

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  • M. Toumi,
  • R. Souissi,
  • J. Ventura,
  • N. Bouguila,
  • C. Dias

摘要

In this study, thin films of pure and chlorine-doped indium sulfide (In2S3) were developed using the spray pyrolysis technique. The doping concentration varied from 0 to 5% with a deposition temperature maintained at 350 °C. The structural properties were determined using the XRD technique. The thin layers have a cubic structure of In2S3 without any evidence of secondary phases. In addition, the crystallinity is improved with the increase of doping concentration, while the crystallite size is in the range of 18 to 44 nm. On the other hand, XPS analysis of chemical elements reveals that the In3d peaks with connection energies of 444 eV (In 3d5/2) and 451.5 eV (In 3d3/2) as well as an S2p peak with a binding energy of 161.7 eV (2p3/2) corresponding to the In2S3 phase. The Cl/S ratio confirmed the increase in the concentration of chlorine ions (Cl−) in the In2S3 matrix. Furthermore, the study of complex impedance indicates a non-Debye relaxation behavior. The photocurrent study of pure and chlorine doped In2S3 demonstrates a significant enhancement in sensitivity, photo-reactivity, detection, and response speed with the addition of chlorine. We note here that the In2S3:Cl4% sample exhibits the optimal values across all these parameters. This increase in photosensitivity highlights the importance of more investigating the doping effect on the physicochemical properties of these films.