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<p>With the increasing scalability of Lithium Niobate-on-insulator (LNOI) based photonic integrated circuits (PICs), the development of LNOI on-chip light source with great compatibility has become an urgent task. In this work, we propose an Al<sub>2</sub>O<sub>3</sub>:Er<sup>3+</sup> waveguide laser based on the distributed feedback (DFB) cavity in LNOI platform, which has a broadband covering C band. By utilizing chalcogenide glass (CHG) as the cladding material in a sandwich structure, the laser with high confinement factor (52.7%) and laser power (13.8 mW) is attainable. It has the TE mode lasing ranging from 1533&#xa0;nm to 1563&#xa0;nm, with laser yield efficiencies over 30% and pump threshold less than 4.2 mW in a 10-mm-long DFB cavity. By introducing Al<sub>2</sub>O<sub>3</sub>:Er<sup>3+</sup> as the active layer, it avoids directly doping the LNOI, thereby maintaining the superior electro-optics effect and achieving a broadband on chip light source. This broadband and highly compatible waveguide laser will find potential applications in LNOI based large scale PICs.</p>

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Design of integrated erbium doped aluminum oxide based distributed feedback waveguide laser on thin film lithium niobate

  • 期刊论文

  • 发表日期：

    2025年8月2日

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  • Zhekang Zhang,
  • Renfei Kuang,
  • Ling Luo,
  • Xifa Liang,
  • Xingwen Yi,
  • Qingming Chen

摘要

With the increasing scalability of Lithium Niobate-on-insulator (LNOI) based photonic integrated circuits (PICs), the development of LNOI on-chip light source with great compatibility has become an urgent task. In this work, we propose an Al2O3:Er3+ waveguide laser based on the distributed feedback (DFB) cavity in LNOI platform, which has a broadband covering C band. By utilizing chalcogenide glass (CHG) as the cladding material in a sandwich structure, the laser with high confinement factor (52.7%) and laser power (13.8 mW) is attainable. It has the TE mode lasing ranging from 1533 nm to 1563 nm, with laser yield efficiencies over 30% and pump threshold less than 4.2 mW in a 10-mm-long DFB cavity. By introducing Al2O3:Er3+ as the active layer, it avoids directly doping the LNOI, thereby maintaining the superior electro-optics effect and achieving a broadband on chip light source. This broadband and highly compatible waveguide laser will find potential applications in LNOI based large scale PICs.