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<p>An organic/inorganic (NiPc/InSe/ITO) heterojunction was created using a vacuum thermal evaporation method. The structure characterization of NiPc/InSe on the ITO substrate was analyzed through X-ray diffraction, and it exhibits a nanostructured nature characterized by a mean crystallite size of approximately 60 nm. Scanning electron microscope shows that InSe thin films have homogeneous and uniform surfaces with nanocrystalline particles. The built-in voltage was determined for the ITO/NiPc/Al and ITO/NiPc/InSe/Al heterojunctions, which decreased with the addition of the InSe film from 0.97 to 0.85 V. The current density–voltage (<i>J</i>-<i>V</i>) characteristics were examined in dark and illumination conditions. Significantly improved diode characteristics are noted for the ITO/NiPc/InSe/Al configuration. The short circuit current (<i>J</i><sub><i>sc</i></sub>), open-circuit voltage, power conversion efficiency, and fill factor (<i>FF</i>) were calculated. It significantly improves <i>J</i><sub><i>sc</i></sub> from 0.44 to 2.26&#xa0;mA/cm<sup>2</sup> and <i>FF</i> from 0.34 to 0.41 by including the InSe layer. Additionally, the relationship between temperature and these parameters was investigated. The findings indicate that the efficiency of power conversion improves with increased temperature. The results underscore the promising advantages of employing NiPc/InSe within organic–inorganic photovoltaic systems. The novelty of this study lies in integrating InSe as an inorganic interface with NiPc, which has not been widely explored in literature. This heterojunction demonstrates enhanced charge transport, improved photogenerated current, and scalable fabrication approach suitable for hybrid photovoltaic applications.</p>

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Structural and optoelectronic characteristics of nickel phthalocyanine with indium selenide deposited on ITO for organic/inorganic heterojunction

  • 期刊论文

  • 发表日期：

    2025年7月4日

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  • F. F. Alharbi,
  • A. A. A. Darwish,
  • Hanan Al-Ghamdi,
  • Badriah Albarzan,
  • Taymour A. Hamdalla

摘要

An organic/inorganic (NiPc/InSe/ITO) heterojunction was created using a vacuum thermal evaporation method. The structure characterization of NiPc/InSe on the ITO substrate was analyzed through X-ray diffraction, and it exhibits a nanostructured nature characterized by a mean crystallite size of approximately 60 nm. Scanning electron microscope shows that InSe thin films have homogeneous and uniform surfaces with nanocrystalline particles. The built-in voltage was determined for the ITO/NiPc/Al and ITO/NiPc/InSe/Al heterojunctions, which decreased with the addition of the InSe film from 0.97 to 0.85 V. The current density–voltage (J-V) characteristics were examined in dark and illumination conditions. Significantly improved diode characteristics are noted for the ITO/NiPc/InSe/Al configuration. The short circuit current (Jsc), open-circuit voltage, power conversion efficiency, and fill factor (FF) were calculated. It significantly improves Jsc from 0.44 to 2.26 mA/cm2 and FF from 0.34 to 0.41 by including the InSe layer. Additionally, the relationship between temperature and these parameters was investigated. The findings indicate that the efficiency of power conversion improves with increased temperature. The results underscore the promising advantages of employing NiPc/InSe within organic–inorganic photovoltaic systems. The novelty of this study lies in integrating InSe as an inorganic interface with NiPc, which has not been widely explored in literature. This heterojunction demonstrates enhanced charge transport, improved photogenerated current, and scalable fabrication approach suitable for hybrid photovoltaic applications.