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<p>In this article, a κ-Ga<sub>2</sub>O<sub>3</sub> cap layer is introduced as gate dielectric to achieve E-mode GaN p-channel heterostructure FETs (p-HFETs). Due to the high spontaneous polarization of κ-Ga<sub>2</sub>O<sub>3</sub>, 2DEG that up to 1.51 × 10<sup>14</sup> cm<sup>− 2</sup> are induced at the κ-Ga<sub>2</sub>O<sub>3</sub>/GaN interface. Based on device simulations, the threshold voltage (<i>V</i><sub>TH</sub>) can reach a high value of -2.42&#xa0;V and maintain negative even when the thickness of the GaN channel (<i>t</i><sub>ch</sub>) is increased to 50&#xa0;nm. By interconnecting base and gate to form a double-gate (DG) structure, the control of 2DEG and 2DHG can be realized. The results show that p-HFETs with DG structure not only exhibit a threefold increase in the on-current (<i>I</i><sub>ON</sub>) while maintaining the E-mode operation, reaching 24.87&#xa0;mA/mm with <i>V</i><sub>TH</sub> of -1.25&#xa0;V, but also reduce the gate leakage current at forward bias. Furthermore, the utilization of κ-Ga<sub>2</sub>O<sub>3</sub> as the gate dielectric results in an enhancement of the gate breakdown voltage to -35.8&#xa0;V. The proposed DG p-HFETs represent a promising approach to achieving high-performance enhancement mode p-channel GaN devices.</p>

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E-mode p-channel GaN/AlGaN HFETs with κ-Ga2O3 as gate oxide

  • 期刊论文

  • 发表日期：

    2025年4月20日

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  • Wenchao Ma,
  • Wei Wang,
  • Jin Wang,
  • Rui Wang,
  • Ting Zhi,
  • Irina N. Parkhomenko,
  • Fadei F. Komarov,
  • Dunjun Chen,
  • Rong Zhang,
  • Junjun Xue

摘要

In this article, a κ-Ga2O3 cap layer is introduced as gate dielectric to achieve E-mode GaN p-channel heterostructure FETs (p-HFETs). Due to the high spontaneous polarization of κ-Ga2O3, 2DEG that up to 1.51 × 1014 cm− 2 are induced at the κ-Ga2O3/GaN interface. Based on device simulations, the threshold voltage (VTH) can reach a high value of -2.42 V and maintain negative even when the thickness of the GaN channel (tch) is increased to 50 nm. By interconnecting base and gate to form a double-gate (DG) structure, the control of 2DEG and 2DHG can be realized. The results show that p-HFETs with DG structure not only exhibit a threefold increase in the on-current (ION) while maintaining the E-mode operation, reaching 24.87 mA/mm with VTH of -1.25 V, but also reduce the gate leakage current at forward bias. Furthermore, the utilization of κ-Ga2O3 as the gate dielectric results in an enhancement of the gate breakdown voltage to -35.8 V. The proposed DG p-HFETs represent a promising approach to achieving high-performance enhancement mode p-channel GaN devices.