<p>We report on two analytical methods describing the electrical properties of photovoltaic modules. The improved nonlinear five-point model (INFP) and the least squares (LS) method were evaluated in terms of the efficacy in determining the intrinsic parameters of photovoltaic modules based on silicon technology both monocrystalline and polycrystalline. The INFP model, used to replicate the electrical behavior of photovoltaic modules, is generally based on simplified assumptions that provide a practical mathematical framework. We leveraged the advantages of the LS method to better account for diode effects and nonlinear behaviors. To assess the ability of the two methods to adapt to different photovoltaic technologies, we evaluated these methods on two distinct technologies under variable irradiation levels. Our findings were further compared to the manufacturers published data. The least squares method is convenient and fast, but it may lack the precision of more rigorous analytical methods such as the five-point method. Subsequently, both INFP and LS models were applied to our processed solar cell based on n-SnS₂/p-Si and perovskite, which showed their capabilities to extract intrinsic parameters towards small thin-film cells with low photovoltaic efficiency.</p>