Light extraction enhancement in light emitting diode covered with ZnO-rGO quantum dots layer: experimental and simulation insight
摘要
We investigate the enhancement of light extraction of a silicon carbide (SiC)-based chip-on-board (COB) light-emitting diode (LED) using a ZnO-rGO QDs thin film as an external layer on the top of the device. The intensity of extracted LED light coated with ZnO-rGO QDs thin film increases by approximately 19% compared to the LED with ZnO QDs thin film without altering the electrical properties. The suitable and integrated combination of ZnO, rGO, and RTV silicone above the LED surface shows the enhancement of light extraction efficiency. The theoretical simulation of the light extraction of the materials also replicates the fact that the ZnO-rGO QDs exhibit better light extraction performance than pristine ZnO and rGO materials.