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<p>The longitudinal and transversal phonons frequencies (<i>ω</i><sub>Lo</sub>, <i>ω</i><sub>To</sub>) of GaAs<sub>1-x</sub>P<sub>x</sub> alloy were calculated. The electronic properties such as energy band gaps (Eg-L, Eg-Γ, and Eg-X) of GaAs<sub>1-x</sub>P<sub>x</sub> have been determined. The optical properties of refractive index (<i>n</i>), optical dielectric constant (<i>ε</i><sub>∞</sub>), and static dielectric constant (<i>ε</i><sub>0</sub>) of GaAs<sub>1-x</sub>P<sub>x</sub> were studied. The effect of pressure on the studied properties has been investigated. The empirical pseudopotential approach (EPM) with virtual crystal approximation (VCA) was used in our calculations. We have determined the pressure transition points from direct to indirect semiconductors for different compositions of the studied alloy. The phonon frequency modes were increased by increasing pressure. Our results are compatible with available experimental data for the electronic, optical, and phonon properties. The calculated results display that the alloy under investigation can be used in optoelectronic applications under high pressure.</p>

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Electronic, optical, and phonons properties of GaAs1-xPx under the effect of pressure

  • 期刊论文

  • 发表日期：

    2025年4月13日

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  • Elkenany Brens Elkenany,
  • Hasan B. Albargi,
  • R. Dhahri,
  • A. M. Al-Syadi

摘要

The longitudinal and transversal phonons frequencies (ωLo, ωTo) of GaAs1-xPx alloy were calculated. The electronic properties such as energy band gaps (Eg-L, Eg-Γ, and Eg-X) of GaAs1-xPx have been determined. The optical properties of refractive index (n), optical dielectric constant (ε∞), and static dielectric constant (ε0) of GaAs1-xPx were studied. The effect of pressure on the studied properties has been investigated. The empirical pseudopotential approach (EPM) with virtual crystal approximation (VCA) was used in our calculations. We have determined the pressure transition points from direct to indirect semiconductors for different compositions of the studied alloy. The phonon frequency modes were increased by increasing pressure. Our results are compatible with available experimental data for the electronic, optical, and phonon properties. The calculated results display that the alloy under investigation can be used in optoelectronic applications under high pressure.