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<p>Perovskite solar cell technology approaches the brink of commercialization, the issue of organic materials and toxic remains a concern. CsSnI<sub>3</sub>, with its eco-friendly nature, optimal 1.3&#xa0;eV band gap, high carrier mobility, and Sn-enhanced stability, stands out as a promising alternative. However, its experimental efficiency is hindered by issues like energy band misalignment, high carrier concentration, and defects. In this work, we present a modification to the structure of a CsSnI<sub>3</sub>/TiO<sub>2</sub> solar cell to tackle its low experimental efficiency. This proposed design focuses on achieving optimal energy band alignment and reducing bulk recombination by optimizing the band gap, conduction band offset, carrier mobility, and defect density within the absorber bulk. Additionally, it aims to mitigate interfacial recombination by inserting a thin intrinsic layer at the CsSnI<sub>3</sub>/TiO<sub>2</sub> interface. The modifications to the CsSnI<sub>3</sub> solar cell architecture have significantly increased its efficiency to 24.54%, up from the previously reported 12.96%.</p>

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Achieving significant improvements in efficiency of CsSnI3-based solar cells through interfacial engineering design modifications using SCAPS 1D and DFT simulation

  • 期刊论文

  • 发表日期：

    2025年3月22日

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  • M. T. Islam,
  • Mukaddar Sk

摘要

Perovskite solar cell technology approaches the brink of commercialization, the issue of organic materials and toxic remains a concern. CsSnI3, with its eco-friendly nature, optimal 1.3 eV band gap, high carrier mobility, and Sn-enhanced stability, stands out as a promising alternative. However, its experimental efficiency is hindered by issues like energy band misalignment, high carrier concentration, and defects. In this work, we present a modification to the structure of a CsSnI3/TiO2 solar cell to tackle its low experimental efficiency. This proposed design focuses on achieving optimal energy band alignment and reducing bulk recombination by optimizing the band gap, conduction band offset, carrier mobility, and defect density within the absorber bulk. Additionally, it aims to mitigate interfacial recombination by inserting a thin intrinsic layer at the CsSnI3/TiO2 interface. The modifications to the CsSnI3 solar cell architecture have significantly increased its efficiency to 24.54%, up from the previously reported 12.96%.