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Enhancement of MAPb0.75Sn0.25I3 solar cell efficiency by doping HTL and ETL layers

  • Doua Abdallaoui,
  • Afak Meftah,
  • Nouredine Sengouga,
  • Maroua Abdallaoui,
  • Madani Labed

摘要

Numerical simulation of a lead–tin perovskite (MAPb0.75Sn0.25I3) solar cell was conducted. The simulation was validated against measurements (Li et al., J. Mater. Chem. C Mater. 5:2360–2367, 2017) and the photovoltaic conversion efficiency (PCE) closely matched the measured value, 12.19≈12.08%. Subsequently, optimization strategies to enhance the SC performance were pursued. Doping hole and electron transport layers (HTL, ETL) with various elements as well as adjusting HTL, ETL, and perovskite thicknesses have improved PCE and carriers’ extraction. These optimizations led to an enhancement in PCE to 12.93%. Further improvements using Copper oxide (Cu2O) as HTL yielded a PCE of 13.38%. Doping Cu2O with Tellurium pushed PCE to 14.73%. Copper doping of Zinc Oxide outperformed other ETLs and increased PCE to 15.33%. Overall, these findings represent significant strides in advancing the design of perovskite solar cells, providing valuable insights for further enhancements in photovoltaic conversion efficiency.