Fabrication and ameliorating the features of PMMA/Si₃N₄/SnO₂ promising nanocomposites for multifunctional optics and quantum nanoelectronics applications

The current work aims to synthesize of silicon nitride(Si₃N₄)/tin dioxide (SnO₂) nanomaterials filled poly-methyl methacrylate(PMMA) as a future and advanced nanostructures to utilize in a variety of optical and tailored nanoelectronics applications. The structural, optical and dielectric properties of PMMA/Si₃N₄/SnO₂ films were examined. The obtained results indicated that the absorbance of PMMA increased of 51.2% at λ = 280 nm (UV-S), while the transmittance reduced of 52.6% with rising Si₃N₄/SnO₂ NPs content of 6.6 wt.%. On other hand, the absorbance increased of 56.3% at λ = 580 nm (VIS-S) and 59.9% at λ = 780 nm (NIR-S). The indirect energy gap of PMMA reduced from 4.3 to 3 eV for allowed transition and from 4 to 2.3 eV for forbidden transition when the Si₃N₄/SnO₂ NPs content increased of 6.6 wt.%, and these results are important in numerous optoelectronics fields. The optical parameters of PMMA increased with increasing Si₃N₄/SnO₂ NPs content. The dielectric properties of PMMA enhanced with addition of Si₃N₄/SnO₂ NPs content. Finally, the results showed that the PMMA/Si₃N₄/SnO₂ films can be considered as potential and promising nanocomposites to exploit in various future optoelectronics nanodevices.