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Design and simulation of non linear metamaterial for full efficient nano structure optical spatial RAM memory detection sensing at mid infrared region

  • Ahmed Nabih Zaki Rashed,
  • Mahmoud M. A. Eid,
  • Shaik Hasane Ahammad

摘要

In this paper, a simulation of a full optical random-access memory (RAM) cell is introduced. A model description of an equivalent analogy optical circuit is presented. The analogy of the regeneration process subsection of full optical RAM is clarified. The analogy of the reading process subsection of full optical RAM is demonstrated. This study clarifies the influence of nonlinear material as the backbone of most modern full optical elements. Discussions of the simulation results and some details on the optical analogy for the subsections of the entire optical RAM cell are provided. The eye figures of the input and outputs for both memory writing and reading represent that Q Factors equal to 120 and 54 respectively. Although the value of Q Factor of the output is lower than its input, but there is no error and consequently, the output can be easily recovered. Also, the results showed that this design can be leveraged to obtain a low memory access latency with a little unimpressive distortion, the regenerating cycle of 3 bits does not exceed for about 0.2 ns.