Strain-induced modulation of electronic and optical properties in hBN/InSe heterostructure

Our study delves into the nuanced effects of strain on hBN/InSe heterostructures, known for their exceptional wide-spectrum absorption capabilities. Employing uniform biaxial strain in the range of −6% to 6%, our investigation reveals a powerful method for manipulating the band gap. Notably, intense tensile strain leads to the near-complete elimination of the band gap—an outcome with profound implications. Comparison with hBN/InTe and hBN/GaTe heterostructures underscores the unique behaviour of hBN/InSe, showing a striking resemblance to hBN/GaTe but achieving lower band gap values under tensile strain. These findings provide crucial insights for experimental work and serve as a guide for more intricate theoretical explorations. With its outstanding electronic properties, tunable band gap, and remarkable absorption characteristics, hBN/InSe emerges as a key player in the development of future novel devices.