Impact behavior of a novel GaN/MoS₂ composite photodiode based thin-film by RF-sputtering for fast response photodetection application

In this study, we present the manufacture and characterisation of a novel thin film photodiode based on a GaN/MoS₂ composite. The purpose of this research is to explore the potential of this composite material for applications in fast response photodetection. The photodiodes were fabricated using physical vapor deposition technique. The investigation of the surface topology and structural characteristics of the nanostructured GaN/MoS₂ thin films was conducted using scanning electron microscopy, Fourier-transform infrared spectroscopy, and X-ray diffraction techniques. The electrical performance of the fabricated photodiodes was investigated by measuring their current–voltage (I–V) characteristics within a bias voltage range from − 2 to + 2 V. The external quantum efficiency of the photodiodes were measured to be up to 11.86% and 8.26% for the pn-photodiode and Schottky photodiode, respectively. On the other hand, the internal quantum efficiency of the fabricated photodiodes were measured to be up to 13.78% and 10.02% for the pn-photodiode and Schottky photodiode, respectively. Also, a response time of 800 µs and 18.23 ms for Schottky-photodiode and pn-photodiodes respectively. These results demonstrate the potential of GaN/MoS₂ composite photodiodes for fast response photodetection applications.