New methods to increase PVR in gate controllable armchair graphene-boron nitride RTDs

Resonant-tunneling diodes (RTDs) based on Graphene nano-ribbons have attracted considerable attention from researchers in the electronics community in recent years. This paper proposes gate controllable armchair graphene RTD (GAG-RTD) structures based on Graphene nano-ribbon/h-Boron-Nitride hetero-structure. By increasing the gate width and putting a layer of h-BN in the graphene channel, we improved the peak-to-valley current ratio (PVR) by about 4–328 times compared to the previous study and also the power consumption decreased significantly. We achieved the power consumption of 3.56 nW and 18.76 nW at valley currents 2.49 nA and 13.7 nA, respectively, which are significantly better than many reported power in the literature. Also, we showed that some ranges of density of states (DOS) are almost non-transmission. Therefore, we divided the DOS into effective and non-effective parts. A numerical tight-binding model coupled with non-equilibrium Green’s function (NEGF) formalism is employed for studying and simulation the electronic properties of these structures.