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<p>Exploring ion channel blocking effects within the Hodgkin-Huxley model is crucial for elucidating ion channel blocking treatment mechanisms and dynamical transitions for neurological diseases. However, complex exponential nonlinear functions in the Hodgkin-Huxley model give significant challenges for theoretical analysis and hardware implementation. To overcome this issue, this paper proposes an N-type locally active memristor-based (N-LAM-based) Hodgkin-Huxley circuit to incorporate the ion channel blocking effects. The N-LAM-based Hodgkin-Huxley circuit deploys two N-type LAMs to characterize the <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\mathrm Na^{+}\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="normal">N</mi> <msup> <mi>a</mi> <mo>+</mo> </msup> </mrow> </math></EquationSource> </InlineEquation> and <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\mathrm K^{+}\)</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mi mathvariant="normal">K</mi> <mo>+</mo> </msup> </math></EquationSource> </InlineEquation> channels, respectively. The ion channel blocking coefficients and a DC voltage stimulus are taken into account in the circuit. Numerical results display that the proposed circuit can trigger rich spiking activities for the DC voltage stimulus and ion channel blocking coefficients. The forming mechanisms of these spiking activities are deduced along with the evolution of equilibrium states. Afterward, an analog circuit implementation is manually fabricated and hardware measurements are performed to confirm the reliability of the N-LAM-based Hodgkin-Huxley circuit and its spiking activities. These explorations can extend the design of memristive Hodgkin-Huxley circuits and assist us in understanding the ion channel blocking effects.</p>

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Ion channel blocking effects in an N-LAM-based Hodgkin-Huxley circuit

  • 期刊论文

  • 发表日期：

    2026年3月11日

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  • Yujian Fang,
  • Chengtao Feng,
  • Zeyu Gu,
  • Huagan Wu,
  • Ning Wang,
  • Quan Xu

摘要

Exploring ion channel blocking effects within the Hodgkin-Huxley model is crucial for elucidating ion channel blocking treatment mechanisms and dynamical transitions for neurological diseases. However, complex exponential nonlinear functions in the Hodgkin-Huxley model give significant challenges for theoretical analysis and hardware implementation. To overcome this issue, this paper proposes an N-type locally active memristor-based (N-LAM-based) Hodgkin-Huxley circuit to incorporate the ion channel blocking effects. The N-LAM-based Hodgkin-Huxley circuit deploys two N-type LAMs to characterize the \(\mathrm Na^{+}\) N a + and \(\mathrm K^{+}\) K + channels, respectively. The ion channel blocking coefficients and a DC voltage stimulus are taken into account in the circuit. Numerical results display that the proposed circuit can trigger rich spiking activities for the DC voltage stimulus and ion channel blocking coefficients. The forming mechanisms of these spiking activities are deduced along with the evolution of equilibrium states. Afterward, an analog circuit implementation is manually fabricated and hardware measurements are performed to confirm the reliability of the N-LAM-based Hodgkin-Huxley circuit and its spiking activities. These explorations can extend the design of memristive Hodgkin-Huxley circuits and assist us in understanding the ion channel blocking effects.