<p>To enhance the dynamical behavior of discrete memristor (DM) chaotic maps, a universal sine-modulation discrete memristor (SDM) is introduced in this paper. SDM model verifies its classification as generalized memristors by four representative memristor cases. By the self-feedback mechanism, four SDM maps are constructed. To better analyze the dynamical performance of memristor chaotic maps, a novel quantitative index “chaotic region scale (CRS)” is introduced, complementing conventional dynamical performance indexes. Results demonstrate that compared with corresponding DM maps, SDM maps have broader chaotic range, larger Lyapunov exponents (LEs), higher complexity, lower autocorrelation, and better CRS performance. DSP-based hardware implementations confirm the physical realizability of SDM models and corresponding chaotic maps, while pseudo-random number generators (PRNGs) designed validate their potential application.</p>

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Sine-modulation Discrete Memristor Chaotic Map and Its Applications

  • Haohui Zhu,
  • Wenhao Liu,
  • Kehui Sun,
  • Huihai Wang

摘要

To enhance the dynamical behavior of discrete memristor (DM) chaotic maps, a universal sine-modulation discrete memristor (SDM) is introduced in this paper. SDM model verifies its classification as generalized memristors by four representative memristor cases. By the self-feedback mechanism, four SDM maps are constructed. To better analyze the dynamical performance of memristor chaotic maps, a novel quantitative index “chaotic region scale (CRS)” is introduced, complementing conventional dynamical performance indexes. Results demonstrate that compared with corresponding DM maps, SDM maps have broader chaotic range, larger Lyapunov exponents (LEs), higher complexity, lower autocorrelation, and better CRS performance. DSP-based hardware implementations confirm the physical realizability of SDM models and corresponding chaotic maps, while pseudo-random number generators (PRNGs) designed validate their potential application.