错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Crossbar array based on tri-valued memristors: its design and application

  • Xiaoyuan Wang,
  • Xinggang Bao,
  • Xiaojing Li,
  • Xinhui Chen,
  • Gongzhi Liu,
  • Sung-Mo Kang,
  • Herbert Ho-Ching Iu

摘要

Memristor has been widely studied in the fields of non-volatile memory, digital logic circuits and neuromorphic computing due to its ultra-high storage density and information processing capacity.. The current research on memristor crossbar array is mainly based on binary memristors and thus suited for binary logic. The crossbar array based on tri-valued memristors is proposed, along with its reset and read/write operations. We present a method for implementing a tri-valued memristor with two binary memristors. Tri-valued-memristor-based crossbar arrays significantly increase the storage density and the information processing capacity. An encode-store-decode circuit for three binary signals is designed using the crossbar array. It can transform three streams of binary signals to a single ternary signal by encoding and reverse transform the encoded signal by decoding. The designed circuits are verified by LTSpice simulation using the Knowm memristor model.