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<p>In this work, bismuth phosphate (BiPO<sub>4</sub>) and Ag-doped BiPO<sub>4</sub> thin films were synthesized via a facile chemical spray pyrolysis method and systematically investigated for photoelectrochemical (PEC) performance. Structural analysis confirmed that Ag incorporation induced controlled lattice distortion and oxygen vacancy formation, which narrowed the band gap from 3.73 to 2.91&#xa0;eV. The optimized 3% Ag-doped in BiPO<sub>4</sub> film exhibited a rod-like surface morphology that facilitated rapid charge transport and efficient interfacial reactions. As a result, the 3% Ag–BiPO<sub>4</sub> photoanode delivered a maximum photocurrent density of 0.337&#xa0;mA&#xa0;cm<sup>−2</sup> at 1.23&#xa0;V vs. RHE and an applied bias photon-to-current efficiency (ABPE) of 0.191% at 0.43&#xa0;V vs. RHE, improved as compared to pristine BiPO<sub>4</sub>. The remarkable enhancement arises from Ag-induced defect engineering and improved interfacial charge separation. This study highlights the theoretical insights based on DFT and experimental results of Ag-modified BiPO<sub>4</sub> as a light-responsive photoanode and provides design guidelines for high-efficiency phosphate-based semiconductors in solar-to-hydrogen energy conversion.</p> Graphical Abstract <p>Incorporation of rod-like Ag in BiPO<sub>4</sub> active sites on FTO conducting substrate via spray pyrolysis method. </p> <p></p>

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Synergistic role of Ag doping and temperature-induced structural modification in BiPO4 thin films for superior photoelectrocatalytic applications

  • 期刊论文

  • 发表日期：

    2026年4月10日

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  • Sagar Kundlik Sodmise,
  • Pratik Ashok Patil,
  • Ashwini Dattatray Jadhav,
  • Rajendra Devidas Kale,
  • Bhishma Karki,
  • Ramchandra Tukaram Sapkal

摘要

In this work, bismuth phosphate (BiPO4) and Ag-doped BiPO4 thin films were synthesized via a facile chemical spray pyrolysis method and systematically investigated for photoelectrochemical (PEC) performance. Structural analysis confirmed that Ag incorporation induced controlled lattice distortion and oxygen vacancy formation, which narrowed the band gap from 3.73 to 2.91 eV. The optimized 3% Ag-doped in BiPO4 film exhibited a rod-like surface morphology that facilitated rapid charge transport and efficient interfacial reactions. As a result, the 3% Ag–BiPO4 photoanode delivered a maximum photocurrent density of 0.337 mA cm−2 at 1.23 V vs. RHE and an applied bias photon-to-current efficiency (ABPE) of 0.191% at 0.43 V vs. RHE, improved as compared to pristine BiPO4. The remarkable enhancement arises from Ag-induced defect engineering and improved interfacial charge separation. This study highlights the theoretical insights based on DFT and experimental results of Ag-modified BiPO4 as a light-responsive photoanode and provides design guidelines for high-efficiency phosphate-based semiconductors in solar-to-hydrogen energy conversion.

Graphical Abstract

Incorporation of rod-like Ag in BiPO4 active sites on FTO conducting substrate via spray pyrolysis method.