Scholarlink

<p>Halide perovskites have been considered as promising candidates for nonvolatile memory systems, but the specific study of structure–property relationship for such flexible framework is far from satisfied. The employment of bismuth avoids the toxicity of lead and instability of APbX<sub>3</sub> structure, a new model of Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub> has been developed. The well control of crystal defects is achieved by the addition of low-molecular-weight molecule (citric acid (CA)) during solution phase synthesis. The switching window and device performance are further improved by incorporating Poly(methyl methacrylate) (PMMA) into the perovskite layer. Through synergistic additives treatment, the devices demonstrate bipolar resistive switching behavior with low operating voltages (± 0.6&#xa0;V), significant ON/OFF ratio (10<sup>4</sup>), stable cyclic retention (600 cycles), and prolonged retention times (&gt; 300&#xa0;s). These results offer new insights for the design of lead-free perovskite memory devices and will be beneficial to optimize the operating processes.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Additive engineering leads to stable halide perovskite with bipolar resistive switching behavior

  • 期刊论文

  • 发表日期：

    2025年7月19日

查看全文
  • Qi Bu,
  • Zhen Fan,
  • Xingyu Liu,
  • Zhijie Luo,
  • Yuhui Zheng,
  • Qianming Wang

摘要

Halide perovskites have been considered as promising candidates for nonvolatile memory systems, but the specific study of structure–property relationship for such flexible framework is far from satisfied. The employment of bismuth avoids the toxicity of lead and instability of APbX3 structure, a new model of Cs3Bi2Br9 has been developed. The well control of crystal defects is achieved by the addition of low-molecular-weight molecule (citric acid (CA)) during solution phase synthesis. The switching window and device performance are further improved by incorporating Poly(methyl methacrylate) (PMMA) into the perovskite layer. Through synergistic additives treatment, the devices demonstrate bipolar resistive switching behavior with low operating voltages (± 0.6 V), significant ON/OFF ratio (104), stable cyclic retention (600 cycles), and prolonged retention times (> 300 s). These results offer new insights for the design of lead-free perovskite memory devices and will be beneficial to optimize the operating processes.