<p>In this study, we explore the effects of introducing random impurities into zigzag bismuth nanoribbons on their edge states and thermoelectric properties. Bismuth nanoribbons with zigzag edges are known for their unique electronic properties, particularly the presence of robust edge states that significantly influence their thermoelectric performance. By strategically incorporating random impurities into the nanoribbons, we aim to manipulate and separate these edge states, thereby enhancing the overall thermoelectric efficiency. Our results demonstrate that the introduction of impurities effectively decouples the edge states from the bulk states, leading to a clear enhancement in thermoelectric properties. This indicates the potential of this method for developing advanced thermoelectric materials. This approach opens new avenues for the design of high-performance thermoelectric devices through impurity engineering in low-dimensional materials.</p>

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Enhancing thermoelectric properties in zigzag bismuth nanoribbons via introduction of random impurities

  • Hossein Karbaschi

摘要

In this study, we explore the effects of introducing random impurities into zigzag bismuth nanoribbons on their edge states and thermoelectric properties. Bismuth nanoribbons with zigzag edges are known for their unique electronic properties, particularly the presence of robust edge states that significantly influence their thermoelectric performance. By strategically incorporating random impurities into the nanoribbons, we aim to manipulate and separate these edge states, thereby enhancing the overall thermoelectric efficiency. Our results demonstrate that the introduction of impurities effectively decouples the edge states from the bulk states, leading to a clear enhancement in thermoelectric properties. This indicates the potential of this method for developing advanced thermoelectric materials. This approach opens new avenues for the design of high-performance thermoelectric devices through impurity engineering in low-dimensional materials.