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<p>The effect of chemical composition on the texture of high-permeability anisotropic (grain-oriented) electrical steel is studied using physical modeling of high-temperature annealing. Electron backscatter diffraction methods are used to investigate the formation of texture during the abnormal grain growth in secondary recrystallization. The texture sharpness is measured, and the distribution of the areas and numbers of grains with respect to the angles of misorientation from the ideal Goss texture position is determined. The misorientations differing from the Goss texture in the secondary recrystallization texture are analyzed. Hypotheses on the appearance of unabsorbed grains due to their size advantage and possible segregation of tin on grain boundaries are formulated. A possible cause of growth of the{112}&lt;110&gt; texture component at the expense of the {111}&lt;112&gt; component during secondary recrystallization is described.</p>

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Formation of Texture in the Process of Secondary Recrystallization of High-Permeability Anisotropic Electrical Steel with Different Alloying Additions

  • 期刊论文

  • 发表日期：

    2025年3月1日

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  • A. S. Roldugina,
  • M. V. Ryazanov,
  • V. I. Parakhin

摘要

The effect of chemical composition on the texture of high-permeability anisotropic (grain-oriented) electrical steel is studied using physical modeling of high-temperature annealing. Electron backscatter diffraction methods are used to investigate the formation of texture during the abnormal grain growth in secondary recrystallization. The texture sharpness is measured, and the distribution of the areas and numbers of grains with respect to the angles of misorientation from the ideal Goss texture position is determined. The misorientations differing from the Goss texture in the secondary recrystallization texture are analyzed. Hypotheses on the appearance of unabsorbed grains due to their size advantage and possible segregation of tin on grain boundaries are formulated. A possible cause of growth of the{112}<110> texture component at the expense of the {111}<112> component during secondary recrystallization is described.