<p>Piezoelectric semiconductor (PSC) heterostructures play a significant role in intelligent, miniaturized, and multi-functional integrated systems. However, bending deformation is inevitable during the processing and operation, impacting its accuracy. In this paper, we present a high-fidelity multi-field coupling theoretical method to research the bending-induced electric potential and carrier concentration redistribution. A layer-wise model is adopted to capture material heterogeneity based on the linearized PSC theory, and the governing equations are solved semi-analytically by combining the state-space method with the differential quadrature method. Comprehensive parametric studies are conducted to systematically explore the regulatory mechanism of differences in initial carrier concentrations, aspect ratios, and boundary conditions on the electromechanical coupling behavior. It is shown that bending-induced redistribution of electric potential and carrier concentration in PSC heterostructures significantly deviates from that in homogeneous structures. This coupled behavior provides new physical insights and offers a theoretical basis for the application of PSC heterostructures.</p>