<p>Zinc manganese selenide (ZnMnSe), a II–VI semiconductor with an adjustable bandgap, has attracted significant interest due to its potential applications in radiation detection and optoelectronics. In this work, Zn<sub>1-x</sub>Mn<sub>x</sub>Se crystals with manganese contents ranging from 0 to 0.15 were grown using a high-pressure Bridgman–Stockbarger technique. The chemical composition and the stoichiometry were verified through energy-dispersive X-ray spectroscopy (EDS). The thermal characteristics of the crystals were then explored using photopyroelectric (PPE) calorimetry, employing both back- and front-detection configurations. This approach allowed the determination of thermal diffusivity and effusivity, which were subsequently combined to calculate the thermal conductivity of each sample. The results for ZnSe were consistent with the literature value, confirming the reliability of the measurements. A systematic decrease in thermal conductivity was observed with increasing Mn concentration, attributed to enhanced phonon scattering due to lattice disorder. These findings offer valuable insights into the influence of Mn incorporation on the thermal transport behavior of Zn<sub>1-x</sub>Mn<sub>x</sub>Se semiconductors.</p>

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Growth and thermal characterization of Zn1-xMnxSe crystals

  • Ali Abouais,
  • Mohammed Boumhamdi,
  • Amina Laouid,
  • Amine Alaoui Belghiti,
  • Karol Strzałkowski,
  • Diksha Singh,
  • Grzegorz Trykowski,
  • Abdelowahed Hajjaji

摘要

Zinc manganese selenide (ZnMnSe), a II–VI semiconductor with an adjustable bandgap, has attracted significant interest due to its potential applications in radiation detection and optoelectronics. In this work, Zn1-xMnxSe crystals with manganese contents ranging from 0 to 0.15 were grown using a high-pressure Bridgman–Stockbarger technique. The chemical composition and the stoichiometry were verified through energy-dispersive X-ray spectroscopy (EDS). The thermal characteristics of the crystals were then explored using photopyroelectric (PPE) calorimetry, employing both back- and front-detection configurations. This approach allowed the determination of thermal diffusivity and effusivity, which were subsequently combined to calculate the thermal conductivity of each sample. The results for ZnSe were consistent with the literature value, confirming the reliability of the measurements. A systematic decrease in thermal conductivity was observed with increasing Mn concentration, attributed to enhanced phonon scattering due to lattice disorder. These findings offer valuable insights into the influence of Mn incorporation on the thermal transport behavior of Zn1-xMnxSe semiconductors.