<p>Bojarite mineral [Cu<sub>3</sub>(trz)<sub>3</sub>(µ<sub>3</sub>-OH)]Cl<sub>2</sub>.6H<sub>2</sub>O was prepared at two temperatures (120 and 150&#xa0;°C) by hydrothermal route for the first time. The sample was characterized by X-ray diffraction (XRD), thermal analysis (TG/DTG) and Raman spectroscopy. The XRD analysis shows peaks attributed to bojarite, crystallizing in a cubic structure. The Raman spectrum displays the characteristic bands of the bojarite. The TG/DTG profile shows that the product contains water and organic matter, consistent with the nominal composition. A direct optical transition of gap E<sub>g</sub> (= 2.26&#xa0;eV), determined from the diffuse reflectance, corresponds to the transition O<sup>2−</sup>:<i>2p</i>→Cu<sup>2+</sup>: <i>t</i><sub>2g</sub>. The photoelectrochemical has also been undertaken. Voltammetry in Na<sub>2</sub>SO<sub>4</sub> solution (0.1&#xa0;M) exhibits low exchange current density (~ 2&#xa0;mA&#xa0;cm<sup>−2</sup>) and good electrochemical stability. The variation of interfacial capacitance versus potential is typical of <i>n</i>-type behavior with an electron density of 3.12 × 10<sup>16</sup>&#xa0;cm<sup>−3</sup> and a flat band potential (E<sub>fb</sub>) of 0.17 <i>V</i><sub>SCE</sub>. The electrochemical impedance spectroscopy (EIS) shows only the bulk contribution in the dark (22 kΩ cm<sup>−2</sup>), which decreases to 12.7 kΩ cm<sup>−2</sup> under visible irradiation supporting the semiconductivity. The positioning of the conduction and valence bands allows us to conclude that this material can be used in electrolysis.</p>

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Preparation of the Bojarite Cu3(trz)33-OH)]Cl2.6H2O at low temperature. Physical and photo-electrochemical Characterization

  • R. Bagtache,
  • W. Douba,
  • A. Lahmek,
  • A. M. Djaballah,
  • M. Trari

摘要

Bojarite mineral [Cu3(trz)33-OH)]Cl2.6H2O was prepared at two temperatures (120 and 150 °C) by hydrothermal route for the first time. The sample was characterized by X-ray diffraction (XRD), thermal analysis (TG/DTG) and Raman spectroscopy. The XRD analysis shows peaks attributed to bojarite, crystallizing in a cubic structure. The Raman spectrum displays the characteristic bands of the bojarite. The TG/DTG profile shows that the product contains water and organic matter, consistent with the nominal composition. A direct optical transition of gap Eg (= 2.26 eV), determined from the diffuse reflectance, corresponds to the transition O2−:2p→Cu2+: t2g. The photoelectrochemical has also been undertaken. Voltammetry in Na2SO4 solution (0.1 M) exhibits low exchange current density (~ 2 mA cm−2) and good electrochemical stability. The variation of interfacial capacitance versus potential is typical of n-type behavior with an electron density of 3.12 × 1016 cm−3 and a flat band potential (Efb) of 0.17 VSCE. The electrochemical impedance spectroscopy (EIS) shows only the bulk contribution in the dark (22 kΩ cm−2), which decreases to 12.7 kΩ cm−2 under visible irradiation supporting the semiconductivity. The positioning of the conduction and valence bands allows us to conclude that this material can be used in electrolysis.