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<p>In the current study, thermal analysis was carried out to investigate the kinematics of glass transition and crystallization in the recently synthesized alloys of the Se<sub>78−x</sub>Te<sub>20</sub>Sn<sub>2</sub>In<sub>x</sub> (x = 0, 2, 4, and 6) system [i.e., SeTeSnIn (STSI) system], where Indium (In) is included as a foreign modifier. The calorimetric experiments with adequate precision have been performed in the differential scanning calorimetry (DSC) to obtain the DSC curves at different heating ramps. The complete set of different kinetic parameters has been computed for the deep thermal analysis of the kinematics. The compositional variations of the glass transition/crystallization temperatures (<i>T</i><sub>g</sub> and <i>T</i><sub>c</sub>) and the corresponding activation energies (<i>E</i><sub>g</sub> and <i>E</i><sub>c</sub>), thermal stability parameter (<i>S</i>), peak value of the crystallization rate constant (<i>K</i><sub>p</sub>) and the glass formation tendency (i.e., Hruby parameter <i>H</i><sub>r</sub>) have also been discussed in detail. The Gibbs–DiMarzio equation shows excellent agreement with experimental T<sub>g</sub> values across all heating rates, affirming its reliability. A key finding is that as Lasocka’s parameter Bc increases, the crystallization activation energy decreases yet remains proportional to the mean heat of atomization. The study identifies a shift in the crystallization mechanism from interface-controlled to diffusion-controlled growth upon indium addition. Introducing indium results in a higher crystallization rate for the quaternary samples, correlating with increased mean bond energy as per Tichy–Ticha formalism. STSI samples exhibit lower Tg and Tc values, making them suitable for applications demanding lower thermal processing and advantageous in scenarios requiring thermal stability at lower temperatures. Although the thermal stability of STSI samples is lower than that of STS, STSI-2 and STSI-3 exhibit improved stability compared to STSI-1, making them more suitable for applications where slightly enhanced stability is required. Higher <i>E</i><sub>c</sub> values in STSI samples suggest enhanced resistance to crystallization, promoting long-term stability. Additionally, simpler crystallization processes in STSI samples, indicated by lower Avrami indices, present advantages for controlled crystallization applications.</p>

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Thermal analysis of the glass/crystal kinematics in the quaternary SeTeSnIn (STSI) glass ceramics

  • 期刊论文

  • 发表日期：

    2025年6月12日

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  • Kaushal Kumar Sarswat,
  • Vishnu Saraswat,
  • A. Dahshan,
  • N. Mehta

摘要

In the current study, thermal analysis was carried out to investigate the kinematics of glass transition and crystallization in the recently synthesized alloys of the Se78−xTe20Sn2Inx (x = 0, 2, 4, and 6) system [i.e., SeTeSnIn (STSI) system], where Indium (In) is included as a foreign modifier. The calorimetric experiments with adequate precision have been performed in the differential scanning calorimetry (DSC) to obtain the DSC curves at different heating ramps. The complete set of different kinetic parameters has been computed for the deep thermal analysis of the kinematics. The compositional variations of the glass transition/crystallization temperatures (Tg and Tc) and the corresponding activation energies (Eg and Ec), thermal stability parameter (S), peak value of the crystallization rate constant (Kp) and the glass formation tendency (i.e., Hruby parameter Hr) have also been discussed in detail. The Gibbs–DiMarzio equation shows excellent agreement with experimental Tg values across all heating rates, affirming its reliability. A key finding is that as Lasocka’s parameter Bc increases, the crystallization activation energy decreases yet remains proportional to the mean heat of atomization. The study identifies a shift in the crystallization mechanism from interface-controlled to diffusion-controlled growth upon indium addition. Introducing indium results in a higher crystallization rate for the quaternary samples, correlating with increased mean bond energy as per Tichy–Ticha formalism. STSI samples exhibit lower Tg and Tc values, making them suitable for applications demanding lower thermal processing and advantageous in scenarios requiring thermal stability at lower temperatures. Although the thermal stability of STSI samples is lower than that of STS, STSI-2 and STSI-3 exhibit improved stability compared to STSI-1, making them more suitable for applications where slightly enhanced stability is required. Higher Ec values in STSI samples suggest enhanced resistance to crystallization, promoting long-term stability. Additionally, simpler crystallization processes in STSI samples, indicated by lower Avrami indices, present advantages for controlled crystallization applications.