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<p>In recent years, there has been growing interest in exploring rare earth oxides as potential high-k gate dielectrics. Al-doped La<sub>2</sub>O<sub>3</sub> (LaAlO<sub>x</sub>) thin films annealed at different temperatures were fabricated on n-type Si substrates via the sol-gel method, a simple and low-cost approach, and the temperature-dependent performance of LaAlO<sub>x</sub> as gate dielectrics was systematically investigated through root-mean-square roughness, interfacial characteristics, and electrical properties analyses. LaAlO<sub>x</sub> thin films remain amorphous in the 500–800 °C range. Films annealed at 700 °C show the lowest root-mean-square roughness of 0.320 nm. XPS analysis indicates that this temperature promotes optimal M-O bond formation and minimizes M-OH bonds, producing the highest film quality. Furthermore, the electrical properties of the Al/ LaAlO<sub>x</sub> /Si/Al metal-oxide-semiconductor (MOS) capacitors were analyzed. The results show that the samples after annealing at 700 °C have good electrical properties, with a high dielectric constant and a low leakage current density at 1 V gate voltage.</p> Graphical Abstract <p></p>

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The performance of LaAlOx gate dielectric films prepared by sol-gel method at different temperatures of annealing

  • 期刊论文

  • 发表日期：

    2026年2月5日

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  • Zhenhua Huang,
  • Kamale Tuokedaerhan,
  • Linyu Yang,
  • Chaozhong Guo,
  • Zhengang Cai,
  • Margulan Ibraimov,
  • Serikbek Sailanbek

摘要

In recent years, there has been growing interest in exploring rare earth oxides as potential high-k gate dielectrics. Al-doped La2O3 (LaAlOx) thin films annealed at different temperatures were fabricated on n-type Si substrates via the sol-gel method, a simple and low-cost approach, and the temperature-dependent performance of LaAlOx as gate dielectrics was systematically investigated through root-mean-square roughness, interfacial characteristics, and electrical properties analyses. LaAlOx thin films remain amorphous in the 500–800 °C range. Films annealed at 700 °C show the lowest root-mean-square roughness of 0.320 nm. XPS analysis indicates that this temperature promotes optimal M-O bond formation and minimizes M-OH bonds, producing the highest film quality. Furthermore, the electrical properties of the Al/ LaAlOx /Si/Al metal-oxide-semiconductor (MOS) capacitors were analyzed. The results show that the samples after annealing at 700 °C have good electrical properties, with a high dielectric constant and a low leakage current density at 1 V gate voltage.

Graphical Abstract